1974
DOI: 10.1109/irps.1974.362643
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Metallization Corrosion in Silicon Devices by Moisture-Induced Electrolysis

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Cited by 50 publications
(35 citation statements)
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“…Al Al+++ + 3e E [12] 3H + 3e = 3/2H2, [13] and the chemical dissolution reaction by summation is Al + 3H -AlH± + 3/2 H2. [14] Reactions at Negative Metallization: With application of a bias, H2 will be evolved at the negative Al track which will make the originally near-neutral solution alkaline, according to Eq.…”
Section: Anodical Dissolution Versusgasevolutionmentioning
confidence: 99%
“…Al Al+++ + 3e E [12] 3H + 3e = 3/2H2, [13] and the chemical dissolution reaction by summation is Al + 3H -AlH± + 3/2 H2. [14] Reactions at Negative Metallization: With application of a bias, H2 will be evolved at the negative Al track which will make the originally near-neutral solution alkaline, according to Eq.…”
Section: Anodical Dissolution Versusgasevolutionmentioning
confidence: 99%
“…As a result, reliability problems increasingly become associated with the metal lines rather than the active devices. The inherent lack of reliability may result from corrosion (Koelmans 1974, Comizzoli 1976, Wada et al 1986), electromigration (Black 1969, Ghate 1983, Fischer and Neppl 1984 or the stress-migration phenomenon (Curry et al 1984, Klema et al 1984, Hinode et al 1990, Korhonen et al 1991, Kusaka et al 1996. The last of these, stress-migration, is fast becoming the dominant failure mechanism, especially as metal line widths reach submicron dimensions.…”
Section: Introductionmentioning
confidence: 99%
“…3 Need for general gas analysis capability. 2. Need for information on species besides moisture, as a result of studies on effects of H2 and 02 on moisture levels.…”
mentioning
confidence: 99%
“…Need for information on species besides moisture, as a result of studies on effects of H2 and 02 on moisture levels. 2 3. Some difficulties in routine use of the moisture sensor in metal parts.…”
mentioning
confidence: 99%