Corrosion of Aluminum Metallization Through Flawed Polymer Passivation Layers; In-Situ Microscopy

Will, Fritz G.; Janora, Kevin H.; McMullen, James G.; Yerman, A.J.

doi:10.1109/irps.1987.362152

Cited by 2 publications

(4 citation statements)

References 9 publications

(11 reference statements)

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“…Aluminum is very reactive and Al(OH) 3 forms at its surface when in presence of water, yielding a high oxidation resistance at pH values between 4 and 9 [39][40][41][42]. Outside this range, the aluminum hydroxide can react as an acid or a base depending on the properties of the solution (i.e., pH and equilibrium potential).…”

Section: Aluminum Corrosionmentioning

confidence: 99%

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Cimmino

Ferrero

2020

Electronics

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The high voltage temperature humidity bias test (HV-THB) has become increasingly popular for evaluating the performances of power semiconductor devices. Given the new challenges of the power semiconductor industry, several applications and devices need to be designed to withstand harsh environments during working operations, with a remarkable focus on high-humidity conditions. The HV-THB test allows one to activate and study different failure mechanisms which were not highlighted by the standard low voltage THB test, enabling new designs in several energy conversion fields, such as energy harvesting, industry and automotive applications. After a brief introduction of current test standards, this work goes through the current methodologies and state-of-the-art of the HV-THB test. The following sections are then dedicated to the knowledge about the failure mechanisms and the models for accelerated testing. Eventually, there is a section devoted to the main passivation materials in order to understand their effects on the HV-THB capabilities of the devices.

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Section: Aluminum Corrosionmentioning

confidence: 99%

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Cimmino

Ferrero

2020

Electronics

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“…Bare Al is known to be very reactive and builds up an aluminium hydroxide (Al(OH) 3 ) layer on its surface when getting in contact with water, thus, providing excellent oxidation resistance [11][12][13][14][28][29][30]. However, the Pourbaix diagram of Al indicates thermodynamic stability is given in region III (between pH 4 and 9) only.…”

Section: Al Corrosionmentioning

confidence: 99%

“…it can react as an acid or a base depending on the solution properties [11,15]. In acidic solution Al(OH) 3 is oxidised to form Al 3+ -ions and can further react to form Al salts [1,28] Al OH…”

Section: Al Corrosionmentioning

confidence: 99%

“…it can react as an acid or a base depending on the solution properties [11, 15]. In acidic solution Al(OH) 3 is oxidised to form Al 3+ ‐ions and can further react to form Al salts [1, 28]

Al {()(, OH)}_{3} + 3 H^{+} false⇆ A l^{3 +} + 3 H_{2} O

Due to their high oxidation state, i.e. their instability in solution, Al 3+ ions are unlikely to reach the cathode by migration.…”

Section: Introductionmentioning

confidence: 99%

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Temperature–humidity–bias testing on insulated‐gate bipolartransistor modules – failure modes and acceleration due to high voltage

Zorn

Kaminski

2015

IET Power Electronics

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The temperature-humidity-bias (THB) test is the standard for accelerated stress testing with respect to corrosion and other humidity driven degradation mechanisms. Usually, 1000 h tests at 85°C and 85% relative humidity are used to predict up to 25 years of operation. The bias is usually limited to 80 V in order to fulfil the respective standards. Nevertheless, THB tests on 1700 V insulated-gate bipolar transistor (IGBT)-modules have shown that higher bias is a more severe test condition. The failure analysis confirmed Cu-and Ag-dendrites and corrosion of the aluminium (Al)-chip-metallisation as the relevant failure mechanisms. To determine the acceleration factor due to voltage, 1200 V IGBT modules were tested in THB at 780 V (65% of V CES) and 1080 V (90% of V CES). A characteristic degradation consisting of three phases has been identified. The second phase seems to be determined by Al corrosion and an acceleration factor of about two has been estimated from 780 to 1080 V. Within the third phase, the devices stabilised probably due to localised self-heating. Thus, this degradation mechanism is kind of self-limiting, but the higher leakage also increases the risk of thermal runaway especially when biased close to the rated collector-emitter voltage.

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Corrosion of Aluminum Metallization Through Flawed Polymer Passivation Layers; In-Situ Microscopy

Cited by 2 publications

References 9 publications

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Temperature–humidity–bias testing on insulated‐gate bipolartransistor modules – failure modes and acceleration due to high voltage

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