Metallic filament domain dynamics-induced abrupt resistive switching characteristics with small hysteresis in two dimensional-crystalline VO2 films

Dual Mode Optoelectronic Devices Based on 2D Single Crystalline VO2 Films with Controlled Metallic Domain Regime Induced Variable Hysteresis

“…It should be noted that because our 2D-crystalline VO 2 film is crystallographically oriented parallel to the in-plane direction of [100] along the SiO 2 surface, as shown in Figure 1b,c, this implies the shortening of V-O lengths due to the in-plane tensile stress along the c R -axis in the 2D-crystalline VO 2 films, which is in good agreement with previous reports. [30,34] Also, the presence of the in-plane tensile strain is further confirmed by comparison of XRD patterns of 2D-crystalline VO 2 films with those of mechanically transferred VO 2 films as shown in Figure S2 (Supporting Information). Consequently, periodic stripe M/I domain configuration at elevated temperatures, as shown in Figure 1a, can result from the in-plane tensile stress of the 2D-crystalline VO 2 films.…”

“…These observations reveal that the stripe M/I domain structure in the individual 2D-crystalline VO 2 platelets is preferentially formed and oriented along the in-plane c R -axis of the rutile structure, corresponding to the a-axis of the monoclinic structure. According to previous reports, [30,31] the stripe M/I domain structure can originate from the stress or strain effects induced by adhesive interaction between VO 2 and substrates for anisotropic VO 2 crystals. To address the strain effect on the stripe M/I domain structure formation in our 2D-crystalline VO 2 films, we investigated and compared the Raman scattering characteristics of the 2Dcrystalline VO 2 films with those of free-standing VO 2 crystals.…”

“…These domains serve as conducting filament channels. [30] We further examined temperature-dependent micro-Raman spectra of the 2D-crystalline VO 2 films upon heating and cooling cycles (Figure 1g,h). The 488 nm laser for micro-Raman measurements was focused on a 2D-crystalline VO 2 film, as indicated by green dots in Figure S4 (Supporting Information).…”

The electrical properties of nitrogen-doped vanadium dioxide thin films grown by magnetron sputtering

“…This characteristic satisfies the application of switching devices. [3] In addition, the phase transition of IOP Publishing doi:10.1088/1742-6596/2800/1/012019 2 VO2 could be induced by electric field, [4] stress, [5] and magnetism. [6] During these years, a series of methods have been used to prepare VO2 films, such as hydrothermal, [7] sol-gel, [8] chemical vapor deposition, [2] pulsed laser deposition [9] and magnetron sputtering.…”