Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction
Hosameldeen Elshekh,
Hongyan Wang,
Chuan Yang
et al.
Abstract:Two-terminal structure memristors are the most promising electronic devices that could play a significant role in artificial intelligence applications of the next generation and the post-Moore era. In this work, we fabricated the memristive device by depositing a heterojunction WOx/TiOy functional layer onto an indium tin oxide substrate using magnetron sputtering. The Ag/WOx/TiOy/ITO device exhibits improved memory behavior of bipolar resistive switching (RS) nonvolatile compared to TiOy-based single-layer me… Show more
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