1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)
DOI: 10.1109/smicnd.1998.733775
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Metallic contacts on porous silicon layers

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Cited by 5 publications
(9 citation statements)
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“…Fig. 6 clearly shows that Al contact to unmodified PS is Schottky by nature that is also supported by the literature [8][9][10]14] and the contact is ohmic after Pd surface modification. The J-V measurements were also conducted with Au contact under the identical condition to verify that Au gives rectifying contact, as expected, even after Pd modification.…”
Section: Electrical Characterizationsupporting
confidence: 83%
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“…Fig. 6 clearly shows that Al contact to unmodified PS is Schottky by nature that is also supported by the literature [8][9][10]14] and the contact is ohmic after Pd surface modification. The J-V measurements were also conducted with Au contact under the identical condition to verify that Au gives rectifying contact, as expected, even after Pd modification.…”
Section: Electrical Characterizationsupporting
confidence: 83%
“…There are also reports on metallic contacts to PS using Au, In, Au-In, In-Sn, Al, etc. and all the contacts showed Schottky behaviour [10]. Electroless Ni deposition was studied for getting metal contact to PS and an ohmic behaviour was observed only for low bias voltages [11].…”
Section: Introductionmentioning
confidence: 99%
“…Martin Palma and co-workers (Martin-Palma et al, 1999) reported the same for the Al-PS-Si-Al sandwich structure, which showed rectifying behavior even after prolonged exposure to the atmosphere. There are also reports on metallic contacts to PS using Au, In, Au-In, In-Sn, Al etc and all the contacts showed Schottky behavior (Angelescu & Kleps, 1998). Electroless Ni deposition was studied for getting metal contact to PS and an Ohmic behaviour was observed only for low bias voltages.…”
Section: Surface Stabilization Of Nps By Different Methodsmentioning
confidence: 99%
“…The metal alloys like Au-In, In-Sn, and so on showed rectifying behavior (Angelescu and Kleps 1998). The alloyed PtSi/porous Si contact shows a good ohmic characteristic with a low contact resistance (Ichinohe et al 1996) but the PtSi/PSi/PtSi structure produces a nonlinear relation for carrier transport as confirmed Downloaded by [United Arab Emirates University ] at 03:54 27 June 2016 by I-V curve measurement (Banihashemian et al 2010).…”
Section: Ohmic and Rectifying Behavior Of M-psi Contactsmentioning
confidence: 81%
“…Most of the reports available on gold, copper, palladium, indium, and titanium as contact metals to PSi are found rectifying (Han et al 1994;Jeske et al 1995;Simons et al 1995;Diligenti et al 1996;Ichinohe et al 1996;Angelescu and Kleps 1998;Matsumoto et al 1998;Skryshevsky et al 1998;Slobodchikov et al 1998Slobodchikov et al , 1999Lue et al 1999;Bhattacharya et al 2000;Vikulov et al 2000;Ghosh et al 2002a;Rabinal and Mulimani 2007;Gallach et al 2012). The metal alloys like Au-In, In-Sn, and so on showed rectifying behavior (Angelescu and Kleps 1998).…”
Section: Ohmic and Rectifying Behavior Of M-psi Contactsmentioning
confidence: 98%