1973
DOI: 10.1103/physrevb.8.6030
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Metal-to-Nonmetal Transition inn-Type Many-Valley Semiconductors

Abstract: We have calculated the critical donor concentration n, for the Mott transition in many-valley semiconductors. Our accurate numerical solution of the Schrodinger equation for Mott s model, as extended by Krieger and Nightingale, shows that previously reported good agreement with experiments has been in part the fortuitous result of calculational simplifications. We also find that the model predicts values of n, '~3aH (where aH is the effective Bohr radius in the material) over 45/o larger in single-valley semic… Show more

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Cited by 30 publications
(11 citation statements)
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“…Each approach gives different values for the Mott constant. For example, while the numerical integration yields 0.412, variational methods yield 0.317 [13]. It is therefore clear that even a more reasonable function with exchange and correlation effects included (Hubbard-Sham, for example) yield poor results.…”
Section: Thomas-fermi Theorymentioning
confidence: 99%
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“…Each approach gives different values for the Mott constant. For example, while the numerical integration yields 0.412, variational methods yield 0.317 [13]. It is therefore clear that even a more reasonable function with exchange and correlation effects included (Hubbard-Sham, for example) yield poor results.…”
Section: Thomas-fermi Theorymentioning
confidence: 99%
“…A very similar distribution was considered in the numerical work of Ref. [13]. Then the potential seen by an electron due to a random distribution of impurities is given by…”
Section: Anderson Localizationmentioning
confidence: 99%
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“…I : b - [14] c - [18] d - [16] e - [19] f - [22][23][24][25] SERVICO DE BIBLIOTECA V(y,z), e quase livre na dire9ao do fio quantico (GaAs) com vetor de onda k=(k ,0,0). 0 potencial do fio quantico, e em principio, x originario da solU9ao autoconsistente das equa90es de Schr6dinger…”
Section: G(~) E Posteriormente C (~W)unclassified