Metal silicide/Si thin-film Schottky-diode bolometers

Abstract

Recently, we have demonstrated Ni silicide/poly-Si diodes as a budget alternative to SOI-diode temperature sensors in uncooled microbolometer FPAs. This paper introduces a solution still more suitable for industry: We have developed PtSi/poly-Si Schottky diodes for microbolometers. Ease of integration of the PtSi/poly-Si diode formation process into the CMOS technology, in analogy with the internal photoemission PtSi/Si IR FPAs, is the merit of the PtSi/poly-Si sensors. Now we demonstrate PtSi/poly-Si diode microbolometers and propose them as a promising solution for focal plane arrays.

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

“…At first, they were washed in the ammonia-peroxide solution and dried in the isopropyl alcohol vapor (for 10 min) and the clean air. Additionally, before moving into the MBE chamber, the substrates were annealed at 600°C at the residual gas pressure of less than 5 × 10 −9 Torr in the preliminary annealing chamber for 6 hours [1,2,23,27].…”

“…This process was performed in three consecutive steps: at first, the wafers were treated in dry oxygen for 30 min, then in wet oxygen for 60 min, and finally, in dry oxygen for 30 min. A 175 nm thick Si 3 N 4 layer was deposited on both sides of the oxidized wafers by pyrolysis of a monosilane-ammonia mixture at the temperature of 750 °C for 60 min [1,2,23].…”

“…At first, they were washed in the ammonia-peroxide solution (NH 4 OH (27%) : H 2 O 2 (30%) : H 2 O [1 : 1 : 3], boiling for 10 min), then rinsed in deionized water, boiled in high-purity isopropyl alcohol ([C 3 H 7 OH] > 99.8 wt%, T ≈ 70°C), and dried in the isopropyl alcohol vapor (for 10 min) and the clean air. Additionally, before moving into the MBE chamber, the substrates were annealed at 600°C at the residual gas pressure of less than 5 × 10 −9 Torr in the preliminary annealing chamber for 6 hours [1,2,23,27].…”

“…Presently, MEMS technology is a rapidly developing branch of science, one of the promising areas of which is the production of IR sensors based on amorphous (α-Si) or polycrystalline (poly-Si) silicon films formed on Si 3 N 4 /SiO 2 dielectric layers [1,2,3]. The properties of α-Si and poly-Si films are determined both by the technological modes of deposition and by the properties of the substrate, primarily, the upper layer of silicon nitride of a complex Si 3 N 4 /SiO 2 /c-Si substrate.…”

Low-temperature formation of platinum silicides on polycrystalline silicon

“…Phases of amorphous and polycrystalline Pt 3 Si and Platinum silicides compounds are widely applied in microelectronic industry due to their compatibility with the CMOS technology. The metallic nature of the conductivity, low electrical resistance and thermal stability make them an optimal material in the production of Schottky diodes [1,2], IR detectors [3][4][5][6], field-effect transistor gates, MEMS technology and the metallic conjunctions in microchips [1]. In the last decade, platinum silicides applications in the quantum wires [7], quantum dots [8] and nanostructures based on them were reported.…”