Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Чиж, К. В.; Arapkina, Larisa V.; Stavrovsky, Dmitry B.; Гайдук, П. И.; Yuryev, Vladimir A.

doi:10.1016/j.mssp.2019.04.014

Cited by 8 publications

(18 citation statements)

References 46 publications

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“…CH3O -and H + , occupying different sites, will reflect different surface characteristics. As a result, the critical adsorption model is proven, which will help us study the subsequent metal deposition in detail [22,23]. The STM image of Si adatoms and the tunneling spectroscopy on the Si rest atom sites suggests that the CH 3 OH molecule dissociates on the Si adatom and rest atom by forming Si-OCH 3 and Si-H, respectively.…”

Section: Ch Oh = Ch O + Hmentioning

confidence: 84%

“…CH 3 O – and H + , occupying different sites, will reflect different surface characteristics. As a result, the critical adsorption model is proven, which will help us study the subsequent metal deposition in detail [ 22 , 23 ].…”

Section: Resultsmentioning

confidence: 99%

“…Although many studies of metal deposition on Si (111)-7 × 7-CH 3 OH/C 2 H 5 OH / C 3 H 7 OH surfaces have been performed, few experimental researches were focused on the specific exploration of a regular atomic structure [ 7 , 23 , 24 ]. In this paper, the comparative analysis of typical samples is very important.…”

Section: Discussionmentioning

confidence: 99%

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Exploring the Dual Characteristics of CH3OH Adsorption to Metal Atomic Structures on Si (111)-7 × 7 Surface

Wang

Ding

et al. 2021

Molecules

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Metal atoms were deposited on an Si (111)-7 × 7 surface, and they were adsorbed with alcohol gases (CH3OH/C2H5OH/C3H7OH). Initially, CnH2n+1OH adsorption was simply used as an intermediate layer to prevent the chemical reaction between metal and Si atoms. Through scanning tunneling microscopy (STM) and a mass spectrometer, the CnH2n+1OH dissociation process is further derived as the construction of a surface quasi-potential with horizontal and vertical directions. With the help of three typical metal depositions, the surface characteristics of CH3OH adsorption are more clearly presented in this paper. Adjusting the preheating temperature, the difference of thermal stability between CH3O– and H+ could be obviously derived in Au deposition. After a large amount of H+ was separated, the isolation characteristic of CH3O– was discussed in the case of Fe deposition. In the process of building a new metal-CH3O–-H+ model, the dual characteristics of CH3OH were synthetically verified in Sn deposition. CH3O– adsorption is prone to influencing the interaction between the metal deposition and substrate surface in the vertical direction, while H+ adsorption determines the horizontal behavior of metal atoms. These investigations lead one to believe that, to a certain extent, the formation of regular metal atomic structures on the Si (111)-7 × 7-CH3OH surface is promoted, especially according to the dual characteristics and adsorption models we explored.

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Section: Ch Oh = Ch O + Hmentioning

confidence: 84%

Section: Resultsmentioning

confidence: 99%

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Exploring the Dual Characteristics of CH3OH Adsorption to Metal Atomic Structures on Si (111)-7 × 7 Surface

Wang

Ding

et al. 2021

Molecules

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“…The Ge or Si layers were deposited from molecular beams (MB) on Si 3 N 4 /SiO 2 /Si(100) dielectric substrates in a Riber EVA32 ultrahigh vacuum (UHV) molecular beam epitaxy (MBE) chamber. The multilayer dielectric substrates were prepared as described in our previous articles [7]- [11]. It should be noticed that since the upper Si 3 N 4 layer was deposited by chemical vapor deposition (CVD) using pyrolysis of a monosilane-ammonia mixture at the temperature of 750°C for 60 min [7]- [11] it can contain up to 8% of H atoms [12], [13].…”

Section: Samplesmentioning

confidence: 99%

Diffusion processes in germanium and silicon films grown on Si$_3$N$_4$ substrates

Arapkina,

Chizh,

Stavrovskii

et al. 2020

Preprint

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In this article, the results of investigation of processes occurring during the molecular-beam deposition of germanium layers on Si 3 N 4 dielectric substrates within a wide range of the Ge film growth temperatures (30 to 600°C) are presented.The intensity of the IR absorption bands related to the vibrations of the N-H and Si-N bonds are established to decrease with the increase of the Ge deposition temperature. It appears that this phenomenon cannot be explained only as a thermally activated process. Simultaneously, the peak corresponding to the Ge-N vibration bonds emerges in the X-ray photoelectron spectra. We suppose that the deposition of germanium layers on Si 3 N 4 dielectric substrates containing hydrogen atoms causes the diffusion of hydrogen atoms from the dielectric layer into the growing film. The experimental results may be interpreted in terms of a model, according to which the migration of hydrogen atoms from the Si 3 N 4 layer into the growing germanium film is due to the difference in chemical potentials of hydrogen atoms in the dielectric layer and the germanium film. This process initiates the diffusion of germanium atoms in the opposite direction, into the Si 3 N 4 layer, where they connect to free bonds of nitrogen atoms arising due to the escape of hydrogen arXiv:2012.10358 2 atoms. The analogous processes occur during the deposition of silicon layers on Si 3 N 4 substrates.

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“…In [9], a comprehensive treatment of friction surfaces of steel parts was proposed, which increases the wear resistance of critical friction sites subjected to hydrogen wear, including: heat treatment to reduce grain sizes; dehydration to reduce the concentration of biographical hydrogen in the sample, ion implantation with silicon to reduce the diffusion of hydrogen from the lubricant or hydrogen-containing environment. In [10], it was proposed, as a measure to reduce the wear of parts operating in hydrogen-containing environments, diffusion siliconizing of friction surfaces. In [11], it was noted that diffusion siliconizing from high-molecular-weight organic silicon compounds using laser processing ensured formating on the surface of steel molds uniform defect-free layers consisting of higher iron silicides and α-phase with microhardness up to 114 MPa.…”

Section: Introductionmentioning

confidence: 99%

Technology to Increase Hydrocarbon Wear Resistance of Friction Units of Hydrogen Aggregates

Shalygin

Kuznetsov

2019

MATEC Web Conf.

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The causes of hydrogen wear of the friction surfaces involved in hydrocarbon transfer and distillation processes are considered. Some technological methods for reducing the hydrogen wear of parts and friction units operating in hydrocarbon environment are given. A comprehensive technology for obtaining the properties of the surface layer is proposed, which provides an increase in the wear resistance of a friction pair and smoothing the surface roughness. The increase in wear resistance is based on several mechanisms: (1) decreasing biographical hydrogen due to the dehydration process; (2) smoothing surface irregularities by saturating the surface with silicon; (3) reducing the diffusion capacity of the steel surface caused by diffusion siliconizing; (4) reducing grain size of the material. Comparative wear tests were carried out, which showed the effectiveness of the proposed methods.

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Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Cited by 8 publications

References 46 publications

Exploring the Dual Characteristics of CH3OH Adsorption to Metal Atomic Structures on Si (111)-7 × 7 Surface

Exploring the Dual Characteristics of CH3OH Adsorption to Metal Atomic Structures on Si (111)-7 × 7 Surface

Diffusion processes in germanium and silicon films grown on Si$_3$N$_4$ substrates

Technology to Increase Hydrocarbon Wear Resistance of Friction Units of Hydrogen Aggregates

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