Metal Sensitizer in Chemically Amplified EUV Resist: a Study of Sensitivity Enhancement and Dissolution

Jiang, Jing; Simone, Danilo De; Vandenberghe, Geert

doi:10.2494/photopolymer.30.591

Cited by 7 publications

(9 citation statements)

References 22 publications

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“…CY-1 showed 39% higher secondary electron yield than reference, while CM-1 showed 9% increase. On the other hand, the double and triple metal sensitizer loadings only slight increase secondary electron yields, similar to the result as reference [7], suggesting sensitivity of metal sensitized resist is not proportional to secondary electron yield. It is worth notice that for CM-4, 29% dose reduction results 5% LCDU increase, while for CY-2, 32% dose reduction results resulted in 29% LCDU increase.…”

Section: Impacts Of Cationsupporting

confidence: 84%

“…As shown in Fig. 1, by mixing the metal sensitizer in C-1, sensitivity of CM-1 increased by 8%, similar to the sensitivity improvement of metal sensitizer in the high quencher loading resists platform in reference [7]. With high absorption anion B m-, sensitivity of CM-2 further increased by 15% from reference CAR, given that the metal specie and the sensitizer loading remained the same.…”

Section: Impacts Of Metal Sensitizer Anionssupporting

confidence: 55%

“…Electron generation efficiency is very like to have impacts on the resist sensitivity. Our previous study showed that mixing metal salt sensitizers composing of a metal cation and organic anions into chemical amplified resists (CAR) improved EUV sensitivity [7,8]. These metal salt sensitizers carry high EUV absorption, leading to high photoelectron yield enhanced acid yield [9].…”

Section: Introductionmentioning

confidence: 99%

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Sensitizer for EUV Chemically Amplified Resist: Metal versus Halogen

Jiang¹,

Giordano²,

Fallica³

et al. 2019

J. Photopol. Sci. Technol.

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Extreme Ultraviolet (EUV) lithography utilizes photons of 91.6 eV energy to ionize resists, generating secondary electrons, thus enabling electron-driven reactions. Unlike photolithography, where photons below 7 eV selectively activate photoactive compounds, photons at 91.6 eV ionize all materials, subsequently generating secondary electrons. The energy and the numbers of secondary electrons generated after ionization are determined by the material chemistry. Several metals are reported to have high secondary electron generation capability and high EUV absorption, therefore metals can be one of the solution to deal with the insufficient photon density in resist. Halogen atoms like iodine and fluorine also provide high absorption which would be suitable alternative sensitizer to the metal salts sensitizer. In this work, we study metal salt sensitizers with different cations and anions as well as halogenated sensitizer in both polymer and PAG. Total electron yields are increased with increased resist absorption for both metal and halogen sensitizer. Sensitivity of resists with metal salt sensitizers increase, resulting in increased LCDU. However, halogenated sensitizers do not show positive correlation between sensitivity and electron yield as metal sensitizer. Through this study, we expect to explore materials that enable both high absorption and high photoelectron generation efficiency at 91.6 eV.

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Section: Impacts Of Cationsupporting

confidence: 84%

Section: Impacts Of Metal Sensitizer Anionssupporting

confidence: 55%

Section: Introductionmentioning

confidence: 99%

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Sensitizer for EUV Chemically Amplified Resist: Metal versus Halogen

Jiang¹,

Giordano²,

Fallica³

et al. 2019

J. Photopol. Sci. Technol.

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“…The development of metal-based resist materials (hereafter referred to as "metal resists") has received considerable research attention [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] due to their various perceived advantages for nextgeneration high-volume manufacturing using extreme ultraviolet lithography (EUVL) [19][20][21][22][23]. Metal resists possess high etching resistance, allowing EUVL application even at thin films.…”

Section: Introductionmentioning

confidence: 99%

Characterization Studies on Metal-based EUV Resist Film Properties

Santillan

Itani

2018

J. Photopol. Sci. Technol.

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Investigations on the resist film depth-profile of a Zr-based EUV metal resist (which contains methacrylic acid or MAA as shell) reveal that the metal cores (Zr) are homogeneously distributed across the film-depth. However, the shell molecules (MAA) in the same resist film have an inhomogeneous distribution (relatively high concentration at the film surface compared to the film bottom). In addition, the total concentration of shell molecules across the film depth is significantly affected (decreases) due to post coating delay and increased exposure dose. Moreover, it is confirmed that the existence of such metal resist film depth inhomogeneities affects the resist's dissolution properties in the developer solution. Specifically, variations in metal resist dissolution characteristics between the film surface, mid-film, and the film bottom are observed. These results confirm the impact of metal resist film properties on its solubility in the developer solution, which can directly affect patterning performance (resolution, line edge/width roughness (LER/LWR), and sensitivity), especially LER/LWR. Keywords: EUV metal resist, Film depth, Inhomogeneity, In situ resist dissolution analysis Experimental conditions 2.1. Materials and processingA metal resist (developed in-house) with a zirconium (Zr) core and a methacrylic acid (MAA) shell was used in these experiments [10,12,24,32,33]. The film thickness was ~30 nm under a postapplication bake (PAB) condition of 80 °C for 60 s. The dissolution process was conducted using normal butyl acetate (nBA) as the developer. This metal resist works as a negative tone type material

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“…Thus, although metal containing resists utilize novel patterning mechanisms and smaller building blocks, RLS trade-off is still hindering performance. In addition, due to the relatively short history of the metal resists, their integration into high volume manufacturing requires tedious efforts in resist material optimization and risk management [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking

Manouras

Kazazis

Koufakis

et al. 2018

Extreme Ultraviolet (EUV) Lithography IX

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The aim of the current work was to develop new sensitive polymeric materials for lithographic applications, focusing in particular to EUV lithography, where the main polymer chain is cleaved under the influence of photogenerated acid. Resist materials based on the cleavage of polymer main chain are in principle capable to create very small structures, to the dimensions of the monomers that they consist of. Nevertheless, in the case of the commonly used non-chemically amplified materials of this type issues like sensitivity and poor etch resistance limit their areas of application, whereas inadequate etch resistance and unsatisfactory process reliability are the usual problems encountered in acid catalyzed materials based on main chain scission. In our material design, the acid catalyzed chain cleavable polymers contain very sensitive moieties in their backbone while they remain intact in alkaline ambient. These newly synthesized polymers bear in addition suitable functional groups for the achievement of desirable lithographic characteristics (thermal stability, acceptable glass transition temperature, etch resistance, proper dissolution behavior, adhesion to the substrate). Our approach for achieving acceptable etch resistance, a main drawback in other main chain cleavable resists, is based on the introduction of polyaromatic hydrocarbons in the polymeric backbone, whereas the incorporation of an inorganic component further enhances the etch resistance. Single component systems can also be designed following the proposed approach by the incorporation of suitable PAGs and base quencher molecules in the main chain. Resist formulations based on a random copolymer designed according to the described rules evaluated in EUV exhibit ultrahigh sensitivity, capability for high-resolution patterning and overall processing characteristics that make them strong candidates upon further optimization.

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Metal Sensitizer in Chemically Amplified EUV Resist: a Study of Sensitivity Enhancement and Dissolution

Cited by 7 publications

References 22 publications

Sensitizer for EUV Chemically Amplified Resist: Metal versus Halogen

Sensitizer for EUV Chemically Amplified Resist: Metal versus Halogen

Characterization Studies on Metal-based EUV Resist Film Properties

Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking

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