Metal–semiconductor contact in organic thin film transistors

Rhee, Shi‐Woo; Yun, Dong‐Jin

doi:10.1039/b805884a

Cited by 80 publications

(107 citation statements)

References 120 publications

(179 reference statements)

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“…Significant efforts have been devoted towards optimizing performance of CuPc based devices [11][12][13]. Controlling charge injection at OSc/metal electrodes remains a big difficulty to overcome [14,15] which is governed by electronic energy level alignment at organic/metal interfaces. In addition, the electronic character of an organic semiconducting molecular over-layer on a metal surface can vary from semiconducting to metallic depending on the nature of arrangement of molecular orbitals with respect to the Fermi level of the electrode.…”

Section: Introductionmentioning

confidence: 99%

Study of metal specific interaction, F-LUMO and VL shift to understand interface of CuPc thin films and noble metal surfaces

Sinha

Mukherjee

2015

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Study of metal specific interaction, F-LUMO and VL shift to understand interface of CuPc thin films and noble metal surfaces

Sinha

Mukherjee

2015

Applied Surface Science

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“…These kind of diagrams could be useful guides for selection of appropriate components in order to obtain an optimum value of the mobility in FET circuits. [7,51,66,107,[127][128][129].…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…Figure 8 shows two types of electrical connections: with bottom-gate, bottom-contact configuration, suitable for polycrystalline deposits ( Figure 8a) and with a top-gate, top-contact configuration suitable for single crystals (Figure 8b). The bottom-gate, bottom-contact configuration (suitable e.g., for polycrystalline semiconducting films) and (b) the top-gate, top-contact configuration (suitable e.g., for single crystal semiconductors) [124,128,129,136].…”

Section: Instrumentation and Backgroundmentioning

confidence: 99%

“…The Φ h and Φ e are small and holes (p-type channel) or electrons (n-type channel) or both of them (ambipolar) could be injected. In some cases, the alignment is controlled by changing the material-semiconductor interface barrier (Δ), which leads to the change of Φ h and Φ e of FET [127][128][129]. It has been demonstrated that self-assembled monolayers (SAMs), e.g., alkanethiols and perfluorinated alkanethiols have opposite dipoles and could be used to, respectively, decrease and increase the work function of metals (i.e., shift the vacuum energy levels as in Figure 32c,d).…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…Some related papers are given in references . They concern properties of TTFs [117,[130][131][132][133], structural [115,123], and electronic [118][119][120][121] properties of solids, electrochemical aspects [122], saturable absorbers [121] and field effect transistors [116,[124][125][126][127][128][129][134][135][136][137][138].…”

Section: Introductionmentioning

confidence: 99%

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Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

2012

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This paper is an overview concerning the preparations and properties as well as possible applications of neutral (one component) metal 1,2-dithiolenes (and selenium analogues). The structural, chemical, electrochemical, optical and electrical behavior of these complexes depend strongly on the nature of ligand and/or the metal. The results of unsymmetrical in comparison to those of symmetrical complexes related to the properties of materials in the solid state are primarily discussed. The optical absorption spectra exhibit strong bands in the near IR spectral region ca. 700 to ca. 1950 nm. X-ray crystal structure solutions show that the complexes usually have square-planar geometry with S-S and/or M-S contacts. Some of them behave as semiconductors or conductors (metals) and are stable in air. The cyclic voltammograms at negative potentials are different from the corresponding potentials of tetrathiafulvalenes (TTFs). As a consequence, the LUMO bands occur at much lower levels than those of TTFs. Consequently, electrical measurements under conditions of field effect transistors exhibit n-type or ambipolar behavior. Illumination of materials with high power lasers exhibits non-linear optical behavior. These properties enable metal 1,2-dithiolene complexes to be classified as promising candidates for optical and electronic applications, (e.g., saturable absorbers, ambipolar inverters). OPEN ACCESSCrystals 2012, 2 763

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Multilayer Integration for Organic Thin‐Film Transistors

Guo

Huang

Ouyang

et al. 2021

Digital Encyclopedia of Applied Physics

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The organic thin‐film transistor (OTFT) owns advantages of low processing temperature and excellent mechanical flexibility for creating truly flexible or stretchable electronics on arbitrate substrates. Beyond extensive research efforts in organic semiconductor (OSC) materials, stacking of the OSC and other layers for high performance OTFTs and circuit integration in a manufacturable way becomes vital. In this article, the advantages of OTFTs over inorganic counterparts are discussed in details. Then the suitable devices structures and multi‐layer material stacks for integration are introduced. The key processes for OSC deposition, device multi‐layer stacking, and especially OSC patterning are described. Finally, the circuit integration techniques, including not only the process for formation of via interconnection but also the circuit styles and integration architectures, are reviewed.

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Metal–semiconductor contact in organic thin film transistors

Cited by 80 publications

References 120 publications

Study of metal specific interaction, F-LUMO and VL shift to understand interface of CuPc thin films and noble metal surfaces

Study of metal specific interaction, F-LUMO and VL shift to understand interface of CuPc thin films and noble metal surfaces

Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

Multilayer Integration for Organic Thin‐Film Transistors

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