Multilayer Integration for Organic Thin‐Film Transistors

Abstract

The organic thin‐film transistor (OTFT) owns advantages of low processing temperature and excellent mechanical flexibility for creating truly flexible or stretchable electronics on arbitrate substrates. Beyond extensive research efforts in organic semiconductor (OSC) materials, stacking of the OSC and other layers for high performance OTFTs and circuit integration in a manufacturable way becomes vital. In this article, the advantages of OTFTs over inorganic counterparts are discussed in details. Then the suitable devices structures and multi‐layer material stacks for integration are introduced. The key processes for OSC deposition, device multi‐layer stacking, and especially OSC patterning are described. Finally, the circuit integration techniques, including not only the process for formation of via interconnection but also the circuit styles and integration architectures, are reviewed.