Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

Li, Huamin; Lee, Dae-Yeong; Choi, Min Kyung; Qu, Deshun; Liu, Xiaochi; Ra, Chang‐Ho; Yoo, Won Jong

doi:10.1038/srep04041

Cited by 105 publications

(73 citation statements)

References 26 publications

(34 reference statements)

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“…The origin of the observed photoresponse in MoS 2 is still under debate. Most studies suggest that photocurrent generated in the MoS 2 phototransistors results from photovoltaic effect (PVE) 9 10 14 17 18 , similarly to what has been found with other conventional semiconductors, e.g. Si, GaAs and GaN.…”

mentioning

confidence: 63%

Photothermoelectric and photovoltaic effects both present in MoS2

Zhang

Wang

et al. 2015

Sci Rep

101

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As a finite-energy-bandgap alternative to graphene, semiconducting molybdenum disulfide (MoS2) has recently attracted extensive interest for energy and sensor applications. In particular for broad-spectral photodetectors, multilayer MoS2 is more appealing than its monolayer counterpart. However, little is understood regarding the physics underlying the photoresponse of multilayer MoS2. Here, we employ scanning photocurrent microscopy to identify the nature of photocurrent generated in multilayer MoS2 transistors. The generation and transport of photocurrent in multilayer MoS2 are found to differ from those in other low-dimensional materials that only contribute with either photovoltaic effect (PVE) or photothermoelectric effect (PTE). In multilayer MoS2, the PVE at the MoS2-metal interface dominates in the accumulation regime whereas the hot-carrier-assisted PTE prevails in the depletion regime. Besides, the anomalously large Seebeck coefficient observed in multilayer MoS2, which has also been reported by others, is caused by hot photo-excited carriers that are not in thermal equilibrium with the MoS2 lattice.

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mentioning

confidence: 63%

Photothermoelectric and photovoltaic effects both present in MoS2

Zhang

Wang

et al. 2015

Sci Rep

101

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“…This phenomenon can be explained on the basis of band theory. 39,40 When the P (VDF-TrFE) is polarized downward (left panel, Fig. 2d), the electrons in the MoS 2 are engaged to compensate for the polarization charges.…”

Section: Resultsmentioning

confidence: 99%

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Wang

Chen

et al. 2017

npj 2D Mater Appl

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Conventional field-effect transistors (FETs) are not expected to satisfy the requirements of future large integrated nanoelectronic circuits because of these circuits' ultra-high power dissipation and because the conventional FETs cannot overcome the subthreshold swing (SS) limit of 60 mV/decade. In this work, the ordinary oxide of the FET is replaced only by a ferroelectric (Fe) polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)). Additionally, we employ a two-dimensional (2D) semiconductor, such as MoS 2 and MoSe 2 , as the channel. This 2D Fe-FET achieves an ultralow SS of 24.2 mV/dec over four orders of magnitude in drain current at room temperature; this sub-60 mV/dec switching is derived from the Fe negative capacitance (NC) effect during the polarization of ferroelectric domain switching. Such 2D NC-FETs, realized by integrating of 2D semiconductors and organic ferroelectrics, provide a new approach to satisfy the requirements of next-generation low-energy-consumption integrated nanoelectronic circuits as well as the requirements of future flexible electronics.

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“…3) in a TMDC material is useful for a variety of devices, including photodetectors, 5,6 photovoltaics, 7 light-emitting diodes (LEDs), 8 field-effect transistors (FETs), 9 logic, 10 memory, 11 and sensors. 12 The TMDC tungsten disulfide (WS 2 ) has an indirect band gap of 1.4 eV in bulk 13 and a direct band gap of 2.1 eV in a monolayer, 14 which is affected by quantum confinement effects.…”

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confidence: 99%

High-performance photocurrent generation from two-dimensional WS2 field-effect transistors

Lee¹,

Lee²,

Hwang³

et al. 2014

Applied Physics Letters

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The generation of a photocurrent from two-dimensional tungsten disulfide (WS 2) field-effect transistors is examined here, and its dependence on the photon energy is characterized. We found from the WS 2 devices that a significant enhancement in the ratio of illuminated current against dark current (I illum /I dark) of $10 2-10 3 is attained, even with the application of electric fields of E D ¼ 0.02 and E G ¼ À22 mV/nm, which are much smaller than that of the bulk MoS 2 phototransistor. Most importantly, we demonstrate that our multilayer WS 2 shows an extremely high external quantum efficiency of $7000%, even with the smallest electrical field applied. We also found that photons with an energy near the direct band gap of the bulk WS 2 , in the range of 1.9-2.34 eV, give rise to a photoresponsivity of $0.27 A/W, which exceeds the photoresponsivity of the bulk MoS 2 phototransistor. The superior photosensing properties of WS 2 demonstrated in this work are expected to be utilized in the development of future high performance two-dimensional optoelectronic devices. V

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Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

Cited by 105 publications

References 26 publications

Photothermoelectric and photovoltaic effects both present in MoS2

Photothermoelectric and photovoltaic effects both present in MoS2

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

High-performance photocurrent generation from two-dimensional WS2 field-effect transistors

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