High-performance photocurrent generation from two-dimensional WS2 field-effect transistors

Lee, Seung Hwan; Lee, Dae-Yeong; Hwang, Wan Sik; Hwang, E. H.; Jena, Debdeep; Yoo, Won Jong

doi:10.1063/1.4878335

Cited by 89 publications

(41 citation statements)

References 39 publications

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“…Single‐ and few‐layer WS 2 have been synthesized via various methods and employed in the field of photodetection . Perea‐López et al have studied the photoresponse of CVD‐grown few‐layer WS 2 , which is highly dependent on the photon energy from light excitation .…”

Section: Photoconductors/phototransistors Based On 2d Layered Semiconmentioning

confidence: 99%

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Xie

Mak

Tao

et al. 2016

Adv Funct Materials

584

547

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1 of 41) 1603886However, despite its high absorption coefficient, [15] single-layer graphene can absorb only ≈2.3% of incident visible and infrared (IR) light due to its thinness, [16,17] which is undesirable for high performance photodetectors that require strong light absorption. Graphene's gaplessness also leads to short photocarrier lifetime in pure graphene, which is unfavorable for efficient photocurrent generation. [18][19][20] In addition to graphene, this family of materials contains an extremely large range of other 2D-layered materials that have recently attracted much research interest. [1][2][3][4][5][6][7][8] Similar to graphene, being atomically thin, these materials exhibit a wide range of unique electrical, optical, thermal, and mechanical properties that can never be seen in their three-dimensional (3D) bulk counterparts due to the dimensionality confinement effect and modulation in their band structures. [21,22] These 2D-layered materials can be metals, semiconductors, insulators, superconductors, topological insulators, or paramagnetic, diamagnetic, ferromagnetic, or anti-ferromagnetic, etc., depending on their composition and phases. [23,24] Among these materials, particular attention has been paid to 2D layered semiconductors thanks to their unique electronic [2,[24][25][26] and optoelectronic properties, [27,28] which arise from their appreciable bandgaps ranging from IR to UV and throughout the visible range.The optical and optoelectronic properties of 2D layered semiconductors are strongly dependent on their number of layers due to the quantum confinement effects in the out-of-plane direction and changes in symmetry. [29,30] This layer-dependent modulation of physical properties, such as bandgap structure, is particularly evident in the semiconducting transition metal dichalcogenides (TMDs) [2,7,29,31,32] and few-layer black phosphorus (BP). [33,34] Another effect induced by vertical quantum confinement is the increased absorption efficiency, which results from the strongly bound excitons due to the reduced thickness. [29,35,36] The atomic thickness of a 2D layered semiconductor also leads to high transparency [37] and good mechanical flexibility, [38] properties of particular interest for novel device applications such as flexible, wearable, or portable electronics. Despite their high transparency, 2D layered semiconductors can strongly interact with incident light, leading to enhanced photon absorption and electron-hole creation due to the existence of Van Hove singularities in their electronic density of states. [39] It has also been reported that 2D layered materials possess extraordinary elastic modulus and large strain (>10%) before rupture, [40][41][42][43] which allow for tuning their electronic and optical properties Following a significant number of graphene studies, other two-dimensional (2D) layered materials have attracted more and more interest for their unique structures and distinct physical properties, which has opened a window for realizing novel electronic or optoelectr...

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Section: Photoconductors/phototransistors Based On 2d Layered Semiconmentioning

confidence: 99%

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Xie

Mak

Tao

et al. 2016

Adv Funct Materials

584

547

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“…Incident photons with an energy similar to the bandgap are efficiently absorbed with lower energy loss compared to higher energy photons resulting from lower wavelength illumination. [ 36 ] As the illumination of devices is global, temperature differences (if any) will be similar between the two interfaces of electrodes and therefore it is safe to assume negligible contribution from the photo‐thermoelectric effect. [ 37 ]…”

Section: Figurementioning

confidence: 99%

Liquid‐Metal Synthesized Ultrathin SnS Layers for High‐Performance Broadband Photodetectors

et al. 2020

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Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low‐cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large‐area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (≈1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large‐area SnS layers exhibit a broadband spectral response ranging from deep‐ultraviolet (UV) to near‐infrared (NIR) wavelengths (i.e., 280–850 nm) with fast photodetection capabilities. For single‐unit‐cell‐thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W−1) than commercial photodetectors at a room‐temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high‐performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.

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“…Graphene and related 2D materials have emerged as potential building blocks for a variety of fundamental optical and electronic components, including field‐effect transistors (FETs), nonvolatile memory devices, photonics devices, and phototransistors . Graphene exhibits an ultrahigh carrier mobility of ≈100 000 cm 2 V −1 s −1 , but it reveals a considerable limitation in regard to real device applications due to its zero bandgap nature .…”

Section: Introductionmentioning

confidence: 99%

Surface Plasmon‐Enhanced Photodetection in Few Layer MoS₂ Phototransistors with Au Nanostructure Arrays

Miao

Jing

et al. 2015

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2D Molybdenum disulfide (MoS2 ) is a promising candidate material for high-speed and flexible optoelectronic devices, but only with low photoresponsivity. Here, a large enhancement of photocurrent response is obtained by coupling few-layer MoS2 with Au plasmonic nanostructure arrays. Au nanoparticles or nanoplates placed onto few-layer MoS2 surface can enhance the local optical field in the MoS2 layer, due to the localized surface plasmon (LSP) resonance. After depositing 4 nm thick Au nanoparticles sparsely onto few-layer MoS2 phototransistors, a doubled increase in the photocurrent response is observed. The photocurrent of few-layer MoS2 phototransistors exhibits a threefold enhancement with periodic Au nanoarrays. The simulated optical field distribution confirms that light can be trapped and enhanced near the Au nanoplates. These findings offer an avenue for practical applications of high performance MoS2 -based optoelectronic devices or systems in the future.

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High-performance photocurrent generation from two-dimensional WS2 field-effect transistors

Cited by 89 publications

References 39 publications

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Liquid‐Metal Synthesized Ultrathin SnS Layers for High‐Performance Broadband Photodetectors

Surface Plasmon‐Enhanced Photodetection in Few Layer MoS₂ Phototransistors with Au Nanostructure Arrays

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High-performance photocurrent generation from two-dimensional WS2 field-effect transistors

Cited by 89 publications

References 39 publications

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Liquid‐Metal Synthesized Ultrathin SnS Layers for High‐Performance Broadband Photodetectors

Surface Plasmon‐Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays

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Surface Plasmon‐Enhanced Photodetection in Few Layer MoS₂ Phototransistors with Au Nanostructure Arrays