Metal-Parylene Interconnection Systems

Abstract

This paper reports the results of a study to integrate a metal-parylene interconnection system. The advantages and issues are highlighted. Fabrication steps for packaging geometries as well as proposed fabrication steps for VLSI applications are discussed. The relevant material properties for interconnection system design have been compiled.

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

“…Poly(1,4-xylene)s, commonly called Parylenes, were developed as electrical insulators owing to their ability to provide conformal coatings (47,48). Parylenes are deposited by chemical vapor deposition (CVD) from a gaseous precursor such as para-cyclophane.…”

“…Parylenes are deposited by chemical vapor deposition (CVD) from a gaseous precursor such as para-cyclophane. Heating the precursor gas to >650 • C causes the para-cyclophane to decompose into two 1,4-xylylidenes, which then deposit onto the cool target substrate and further react to form a linear polymer with excellent stability (47,48). In addition to the hydrocarbon form (Parylene-N), there are also halogenated forms including Parylene-C (monochloro), Parylene-D (dichloro), and Parylene-F (fluorinated).…”

“…www.annualreviews.org • Low-Dielectric Constant Insulators a low relative dielectric constant (2.6) and elastic modulus (2.4 GPa) as well as a high CTE (42-69 ppm • C −1 ) (48,49). Use of Parylene has been inhibited owing to high weight loss at 400 • C (up to 10% h −1 ), and the potential cost and complexity of running an organic CVD reactor (47).…”

Hamaker Constants in Integrated Circuit Metalization

“…Of particular interest are metals such as copper and silver (1-3) and dielectric polymers such as parylene, polyimide, and vapor deposited poly(tetrafluoroethylene) (PTFE) (3)(4)(5). Proper understanding of the adhesion between these materials is required to ensure films remain adhered and particle contamination is minimized, and also to guide the rational selection of new materials.…”

“…32 and 12 are the differences in the dielectric response of the three materials and are given by [4] and ξ = 4π 2 kT h n, [5] where ε j is the dielectric response function of a given material at wavelength j and n is an integer from Eq. [3]. The major difficulty and most of the work associated with full spectral determination of Hamaker constants is involved in determining ε i (ξ ).…”