Metal–Oxide RRAM

Wong, Hang; Lee, Heng-Yuan; Yu, Shimeng; Chen, Yu‐Sheng; Wu, Yang; Chen, Pang-Shiu; Lee, Byoungil; Chen, F. T.; Tsai, Ming-Jinn

doi:10.1109/jproc.2012.2190369

Cited by 2,411 publications

(1,249 citation statements)

References 126 publications

Supporting

Mentioning

1,185

Contrasting

Unclassified

Order By: Relevance

“…Resistive switching in metal oxide resistive memory is achieved by the forming and rupture of the conductive filament [1]. A forming process is required to initiate the filament in the pristine device if the as-deposited oxide layer is highly insulating.…”

Section: Zno Resistive Switching Memorymentioning

confidence: 99%

“…Among the many contenders for the next-generation of memory device, resistive switching memory based on metal oxides has emerged as the leading candidate [1]. Many metal oxides have been reported to show resistive switching properties such as TiO2 [2], HfO2 [3,4], Ta2O5 [5] etc.…”

Section: Introductionmentioning

confidence: 99%

“…Many metal oxides have been reported to show resistive switching properties such as TiO2 [2], HfO2 [3,4], Ta2O5 [5] etc. For resistive memory in general, highvoltage forming process is needed to initiate the switching, which will normally lead to high power consumption and increased circuit and operational complexity [1]. The development of forming-free resistive memory devices is therefore desirable.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Huang

Kiang

Morgan

et al. 2016

Microelectronic Engineering

View full text Add to dashboard Cite

Undoped ZnO thin films with tunable electrical properties have been achieved by adjusting the O2 plasma time in the plasma enhanced atomic layer deposition process. The structural, compositional and electrical properties of the deposited ZnO films were investigated by various characterization techniques. By tuning the plasma exposure from 2 to 8 s, both resistivities and carrier concentrations of the resultant ZnO films can be modulated by up to 3 orders of magnitude. Forming-free TiN/ZnO/TiN resistive memory devices have been achieved by choosing the ZnO film with the plasma exposure time of 6 s. This deposition method offers a great potential for producing other un-doped metal oxides with tunable properties as well as complex multilayer structures in a single deposition.

show abstract

Section: Zno Resistive Switching Memorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Huang

Kiang

Morgan

et al. 2016

Microelectronic Engineering

View full text Add to dashboard Cite

show abstract

“…As flash memory fast approaches its scaling and power limits 1,2 , other promising NVM technologies are being developed. Among these, resistive random access memory (RRAM) 3,4 has gained popularity in industry because it utilizes materials that are in common use in semiconductor processing. These MIM memory cells operate by switching the insulator between a high-resistive state (HRS) and a low resistive state (LRS).…”

mentioning

confidence: 99%

“…These MIM memory cells operate by switching the insulator between a high-resistive state (HRS) and a low resistive state (LRS). Whereas the switching mechanism to the LRS is well understood as oxygen atoms being removed from the lattice to form a conductive filament bridging the electrodes, there is not a complete consensus on the switching mechanism to return the MIM device to its HRS 3 . It is known, however, that the type of metal used to contact the insulator may influence this switching mechanism 5,6 .…”

mentioning

confidence: 99%

Carbon nanotube network-silicon oxide non-volatile switches

Liao

Araújo

et al. 2014

Nat Commun

View full text Add to dashboard Cite

Resistive‐Switching Memory

Ielmini

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

View full text Add to dashboard Cite

Resistive‐switching random‐access memory (RRAM) based on ion migration in insulating layers might revolutionize future nanoelectronic circuits for both memory and logic. The high‐speed, low‐power change of resistance in RRAM can be exploited not only for data storage but also for reconfiguration of programmable logic circuits and for neuromorphic computation. In this review, the strengths and limitations of RRAM will be discussed. First, the RRAM concept will be reviewed in terms of memory operation and physical mechanisms for switching. The RRAM architectures will be discussed with emphasis on the crossbar array structure allowing for high density and reliable operation through proper selector devices. Finally, the RRAM applications in computing systems will be reviewed, addressing the RRAM switch in field‐programmable gate array (FPGA) and neuromorphic circuits.

show abstract

Metal–Oxide RRAM

Cited by 2,411 publications

References 126 publications

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Carbon nanotube network-silicon oxide non-volatile switches

Resistive‐Switching Memory

Contact Info

Product

Resources

About