Metal oxide resistive switching memory: Materials, properties and switching mechanisms

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung‐Yuen

doi:10.1016/j.ceramint.2017.05.289

Cited by 106 publications

(50 citation statements)

References 39 publications

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“…The CF is a channel having a very less diameter of the order of nanometers which connects the top and the bottom electrodes of the memory cell. A low resistance state (LRS) with high conductivity is obtained when the filament is connected and the high resistance (HRS) results when the filament is disconnected with a gap between the electrodes [91]. Based on the composition of the conductive filament, RRAM can be classified into the following two types: (i) metal ion-based RRAM also referred to as conductive bridge random access memory (CBRAM) and (ii) oxygen vacancies filament-based RRAM referred to as the 'OxRRAM' .…”

Section: Resistive Switching Mechanismmentioning

confidence: 99%

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

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In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM.

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Section: Resistive Switching Mechanismmentioning

confidence: 99%

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

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“…To further investigate the resistive switching mechanism of the LZO-5 device, an Ag conducting filament model was proposed [ 10 , 31 ] to analyze the formation and rupture of the metallic Ag filament in the LZO-5 device, as shown in Figure 11 . Initially, when no bias voltage acted on the TE, the LZO-5 device located at HRS, as shown the step 1 in Figure 11 .…”

Section: Resultsmentioning

confidence: 99%

“…So far, RRAM has been reported in a variety of material systems, including organic materials [ 5 ], complex composition materials [ 6 ], and binary transition metal oxide materials [ 7 , 8 ]. In addition, compared with the other material systems, various new types of metal-oxide based RRAM devices are being devised, attributable to their potential advantages [ 9 , 10 ], as well as excellent compatibility with the current complementary metal oxide semiconductor (CMOS) technology [ 11 ]. Nevertheless, among these metal oxide materials, ZnO which has become the third generation oxide semiconductor material attracts many people to study it, in the field of RRAM, due to exhibiting unique features, i.e., easy preparation processes, a large memory window, and the possibility of fabricating transparent and flexible electronic devices [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

et al. 2020

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In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. The resistive switching behaviors of the resulting Pt/Ag/LZO/Pt devices, with different Li-doping contents, were studied under direct current (DC) and pulse voltages. The experimental results showed that compared with the devices doped with Li-8% and -10%, the ZnO based RRAM device doped by 5% Li-doping presented stable bipolar resistive switching behaviors with DC voltage, including a low switching voltage (<1.0 V), a high endurance (>103 cycles), long retention time (>104 s), and a large resistive switching window. In addition, quick switching between a high-resistance state (HRS) and a low-resistance state (LRS) was achieved at a pulse voltage. To investigate the resistive switching mechanism of the device, a conduction model was installed based on Ag conducting filament transmission. The study of the resulting Pt/Ag/LZO/Pt devices makes it possible to further improve the performance of RRAM devices.

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“…Resistive‐switching memories (ReRAMs) demand fast operation time, large endurance, and low power voltage . A ReRAM consists of metal–insulator–metal structures and it operates according to a reversible resistive‐switching behavior between two stable resistance states, a high resistance state (HRS) and low resistance state (LRS), which form a conductive filament or bridge.…”

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

“…The SET process is operated when the resistance changes from HRS to LRS, while the RESET process comes into effect when the resistance changes from LRS to HRS. The nonvolatile nature of ReRAM requires that HRS or LRS should be maintained even after the electrical stress comes to an end; further, the voltage needs to be larger than the set voltage for the operation of resistive‐switching behaviors and executing consequent cycles, which is often called an electroforming process …”

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

Halide Perovskites for Applications beyond Photovoltaics

et al. 2018

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In recent years, halide perovskites have been attracting intense attention as novel materials for photovoltaic applications due to their high carrier mobility, extraordinarily long carrier diffusion lengths, and suitable optical bandgaps. Furthermore, there are extensive applications of halide perovskites owing to their exceptional attributes in different areas, such as light‐emitting diodes, lasers, X‐ray detectors, memory devices, and more. Here, the unique characteristics of halide perovskite materials are described, including their electrical and optical properties, to explain why these materials are so exciting for a wide variety of applications. After introducing the synthesis techniques used to prepare halide perovskite films, recent advances on the applications of halide perovskites beyond photovoltaics are addressed. The challenges to be overcome for several applications are described and it is suggested that halide perovskites are equivalent to a gold standard in developing next‐generation optoelectronic and electronic devices.

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Metal oxide resistive switching memory: Materials, properties and switching mechanisms

Cited by 106 publications

References 39 publications

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Halide Perovskites for Applications beyond Photovoltaics

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