Metal organic vapour phase epitaxy of GaN and lateral overgrowth

Gibart, P.

doi:10.1088/0034-4885/67/5/r02

Cited by 292 publications

(233 citation statements)

References 251 publications

(289 reference statements)

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“…[4] Various techniques like epitaxial lateral overgrowth (ELOG) have been employed to reduce the threading dislocation (TD) density of heteroepitaxial nitride films and TD density of mid 10 6 cm −2 has been achieved with sapphire substrates. [5] As a comparison, homoepitaxial GaAs exhibits TD density of ≈10 2 -10 4 cm −2 and homoepitaxial Si has almost no dislocations. The high dislocation density hinders the performance of nitride devices, especially LDs and high power transistors.…”

mentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

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mentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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“…In III-N technology, SAG has been employed mostly in epitaxial lateral overgrowth (ELOG) methods which were developed to reduce threading dislocations in heteroepitaxial growth [55][56][57]. In contrast with ion implantation, the extensively characterized [58][59][60][61][62] defect-free GaN layers grown by lateral epitaxial over-growth can provide a more beneficial solution to realize LHJ structures [63].…”

Section: Selective Area Growth As a Methods To Realize A Lateral Pn-jumentioning

confidence: 99%

Diffusion-Driven Charge Transport in Light Emitting Devices

Kim¹,

Kivisaari²,

Oksanen³

et al. 2017

Preprint

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Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses which arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto-and microelectronics.

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“…We chose GaN epitaxial layers since this material typically exhibits rather large dislocation densities, 18 which enables us to find sufficient numbers of dislocations intersecting the limited surface areas scanned by STM. 17,30 Thus, the experiments are performed on non-polar GaN(10 10) surfaces obtained by cleaving epitaxially grown n-type GaN(0001) layers with carrier concentrations of a few 10 18 cm À3 .…”

Section: Methodsmentioning

confidence: 99%

“…This induces rather large dislocation concentrations far beyond those characteristic for the classical III-V semiconductors. 18 Therefore, the need to reduce the dislocation concentrations has led to growth schemes, where the dislocation lines are bent off the growth direction. [19][20][21][22][23][24][25][26] Hence, most dislocations are not present in their original line direction and may thus change their electronic properties.…”

Section: Introductionmentioning

confidence: 99%

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Weidlich

Schnedler

Portz

et al. 2015

Journal of Applied Physics

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A methodology for the determination of the subsurface line direction of dislocations using scanning tunneling microscopy (STM) images is presented. The depth of the dislocation core is derived from an analysis of the displacement field measured by STM. The methodology is illustrated for dislocations at GaN(10 10) cleavage surfaces. It is found that the dislocation line bends toward the surface, changing from predominantly edge-type to more screw-type character, when approaching the intersection point. Simultaneously, the total displacement detectable at the surface increases due to a preferred relaxation towards the surface. V C 2015 AIP Publishing LLC.

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Metal organic vapour phase epitaxy of GaN and lateral overgrowth

Cited by 292 publications

References 251 publications

Defects in Single Crystalline Ammonothermal Gallium Nitride

Defects in Single Crystalline Ammonothermal Gallium Nitride

Diffusion-Driven Charge Transport in Light Emitting Devices

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

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