Metal foil RF micro-relay with integrated heat sink for high power applications

Ozkeskin, F. M.; Choi, Sangjo; Sarabandi, Kamal; Gianchandani, Yogesh B.

doi:10.1109/memsys.2011.5734540

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…Pt-Rh was chosen as the contact metal due to its high RF power handling capability [27]. A 25-μm-thick rectangular Pt-Rh contact bridge is located inside the 28-μm-deep recess below the tip of the cantilever for the electrical contact.…”

Section: Designmentioning

confidence: 99%

Batch-Fabricated High-Power RF Microrelays With Direct On-PCB Packages

Ozkeskin

Choi

Sarabandi

et al. 2012

J. Microelectromech. Syst.

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This paper describes a process for batch manufacturing, assembly, and packaging of metal alloy microrelays directly on printed circuit board (PCB) substrates for high-power radio frequency (RF) applications. Stainless steel cantilevers with Pt-Rh tips are mounted on Rogers 4003 PCB substrates to demonstrate the approach. A multilayer PCB design allows for the use of subsurface metal layers to transmit the RF signal into and out of the sealed encapsulation. The electrostatically actuated microrelays with 8.4-mm 2 footprints have 78-V pull-in voltage and 1.1-Ω ON-state resistance. Packaged microrelays exhibit down-state insertion loss and up-state isolation better than −0.25 and −15 dB, respectively, for frequencies up to 5 GHz. Packaged devices remain functional up to 20-W RF power under hot switching conditions. The high power lifetime of the microrelays is 10 913 cycles for 1-W incident RF power in 1-s pulses and 8414 cycles for 10-W incident RF power in 0.1-s pulses. The impact of device encapsulation and multilayer PCB substrate on device performance is addressed.[ 2011-0284]Index Terms-Batch fabrication, high power, package, printed circuit board (PCB), radio frequency (RF) microrelay.

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Section: Designmentioning

confidence: 99%

Batch-Fabricated High-Power RF Microrelays With Direct On-PCB Packages

Ozkeskin

Choi

Sarabandi

et al. 2012

J. Microelectromech. Syst.

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“…To decrease the pull-in voltage, NEMS process [23,24,28,29] or liquid dielectric [30,31] is necessary. As logic devices, the NEMS are perfect [32][33][34], but the NEMS devices are hard to be used as power devices to convert tens or even hundreds of milliamperes current [35][36][37]. Devices with liquid dielectric also have followed disadvantages: (a) they are realized by a complex process, (b) the liquid environment introduces large damping coefficient, which deteriorates the switching time of the relays.…”

Section: Introductionmentioning

confidence: 99%

Low voltage, high speed and small area in-plane MEMS switch

Bian

Zhao

You

2019

J. Micromech. Microeng.

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Electrostatic in-plane microelectromechanical systems (MEMS) relays/switches are widely applied for their low power consumption and simple process. However, compared to the out-ofplane designs, in-plane designs usually suffer from high pull-in voltage, since the feature size of the bulk-silicon process limits the gap between the driving electrodes. Area cost and speed usually have to be sacrificed to enhance the driving force and decrease the pull-in voltage.Balancing the pull-in voltage, speed and area cost is difficult for MEMS relays/switches but is essential in many practical applications. Comb structure is promising to relieve this contradiction. In this paper, we integrated the comb structure with the cantilever structure. As a result, the pull-in voltage decreased with the decreasing of the mass and area cost. A novel electrostatic lateral MEMS switch was introduced. The experiments have shown that 12 V pull-in voltage, 120 µs switching time with a 28 V driving voltage at atmospheric pressure, and small area were fabricated using a conventional bulk-silicon process.

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