2013
DOI: 10.1016/j.ccr.2013.07.010
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Metal ALD and pulsed CVD: Fundamental reactions and links with solution chemistry

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Cited by 64 publications
(65 citation statements)
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“…29,[32][33][34][35] Here, deposition occurs in cyclic manner; the overall deposition cycle using two initial reactants involves four consecutive pulses of precursor vapors, purge gas, second reactant and purge gas again. In some cases, more complicated designs are used, which involve intermediate evacuation of the reaction chamber.…”
Section: 31mentioning
confidence: 99%
“…29,[32][33][34][35] Here, deposition occurs in cyclic manner; the overall deposition cycle using two initial reactants involves four consecutive pulses of precursor vapors, purge gas, second reactant and purge gas again. In some cases, more complicated designs are used, which involve intermediate evacuation of the reaction chamber.…”
Section: 31mentioning
confidence: 99%
“…ALD is advantageous because it gives extremely conformal and uniform coatings [31,32]. (True) ALD is based on the alternating reactions of gas phase species at a surface that generally deposit rather small quantities of material with each step.…”
Section: Introductionmentioning
confidence: 99%
“…Atomic layer deposition (ALD) is a method based on successive, alternating surface-controlled reactions from the gas phase to produce highly conformal and uniform thin film nanostructures, and provides the thickness control at the atomic level [25,26]. The structure growth principle by ALD is similar to the CVD, except the ALD reaction breaks the CVD process into two half-reactions, keeping the precursor materials separate during the reaction.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%
“…Next, the second precursor is purged and reacts with the first precursor on the surface. At the end of the process, the unused second precursor and the reaction byproducts are also removed [25,26]. The precursors for the ALD can be solid, liquid, and gaseous.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%
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