MESFETs Made From Individual GaN Nanowires

Blanchard, Paul T.; Bertness, Kristine A.; Harvey, Todd E.; Mansfield, Lorelle M.; Sanders, Aric W.; Sanford, Norman A.

doi:10.1109/tnano.2008.2005492

Cited by 70 publications

(35 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Dielectrophoresis has been previously demonstrated [3,23] as a means of integrating nanowires to microfabricated structures in a wafer-level assembly technique. This method is less time-consuming than using micromanipulators to place individual nanowires.…”

Section: Nanowire Placementmentioning

confidence: 99%

Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

Brown

Baca

Bertness

et al. 2011

Sensors and Actuators A: Physical

Self Cite

View full text Add to dashboard Cite

Section: Nanowire Placementmentioning

confidence: 99%

Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

Brown

Baca

Bertness

et al. 2011

Sensors and Actuators A: Physical

Self Cite

View full text Add to dashboard Cite

“…Recently, rapid progress has been found in the fabrication of GaN-based optoelectronic and microelectronic devices such as GaN-based light-emitting diodes [LEDs] [1], laser diodes [LDs] [2], Solar-blind MSM-photodetectors [3], metal-semiconductor field effect transistor [MESFETs] [4], modulation-doped field effect transistor [MODFETs] [5], heterostructure field effect transistors [HFETs] [6] and high electron mobility transistors [HEMTs] [7,8]. Especially, the performance and reliability of these devices have been improved with high quality ohmic and Schottky rectifiers.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties and interfacial reactions of rapidly annealed Ni/Ru Schottky rectifiers on n-type GaN

Reddy¹,

Reddy²,

Choi³

2010

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Examples of such effects have previously been reported in both transient and steady-state experiments involving photoconductivity (PC), photoluminescence (PL), the behavior of NW field-effect transistors (FETs), and NW gas sensors. [11][12][13][14][15][16][17][18][19] In the present work, we study transport properties, surface effects, and transient FET behavior as revealed by PC, backgated FETs, and top-gated MESFETs. All devices were fabricated from c-axis GaN NWs grown by nitrogen-plasmaassisted molecular beam epitaxy (MBE).…”

mentioning

confidence: 99%

Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and air

Sanford

Robins

Blanchard

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility (μ) and density (σs) of negative surface charge for c-axis oriented Si-doped GaN nanowires (NWs). In this approach, we assumed that σs was responsible for the equilibrium surface band bending (∅) and surface depletion in the absence of illumination. The NWs were grown by molecular beam epitaxy to a length of approximately 10 μm and exhibited negligible taper. The free carrier concentration (N) was separately measured using Raman scattering which yielded N = (2.5 ± 0.3) × 1017 cm−3 for the growth batch studied under 325 nm excitation. Saturation of the PC was interpreted as a flatband condition whereby ∅ was eliminated via the injection of photogenerated holes. Measurements of dark and saturated photocurrents, N, NW dimensions, and dimensional uncertainties, were used as input to a temperature-dependent cylindrical Poisson equation based model, yielding σs in the range of (3.5 to 7.5) × 1011 cm−2 and μ in the range of (850 to 2100) cm2/(V s) across the (75 to 194) nm span of individual NW diameters examined. Data illustrating the spectral dependence and polarization dependence of the PC are also presented. Back-gating these devices, and devices from other growth batches, as field effect transistors (FETs) was found to not be a reliable means to estimate transport parameters (e.g., μ and σs) due to long-term current drift. The current drift was ascribed to screening of the FET back gate by injected positive charge. We describe how these gate charging effects can be exploited as a means to hasten the otherwise long recovery time of NW devices used as photoconductive detectors. Additionally, we present data illustrating comparative drift effects under vacuum, room air, and dry air for both back-gated NW FETs and top-gated NW MESFETs.

show abstract

MESFETs Made From Individual GaN Nanowires

Cited by 70 publications

References 28 publications

Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

Electrical properties and interfacial reactions of rapidly annealed Ni/Ru Schottky rectifiers on n-type GaN

Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and air

Contact Info

Product

Resources

About