We report steady-state and time-resolved photoluminescence ͑TRPL͒ measurements on individual GaN nanowires ͑6-20 m in length, 30-940 nm in diameter͒ grown by a nitrogen-plasma-assisted, catalyst-free molecular-beam epitaxy on Si͑111͒ and dispersed onto fused quartz substrates. Induced tensile strain for nanowires bonded to fused silica and compressive strain for nanowires coated with atomic-layer-deposition alumina led to redshifts and blueshifts of the dominant steady-state PL emission peak, respectively. Unperturbed nanowires exhibited spectra associated with high-quality, strain-free material. The TRPL lifetimes, which were similar for both relaxed and strained nanowires of similar size, ranged from 200 ps to over 2 ns, compared well with those of low-defect bulk GaN, and depended linearly on nanowire diameter. The diameter-dependent lifetimes yielded a room-temperature surface recombination velocity S of 9 ϫ 10 3 cm/ s for our silicon-doped GaN nanowires.
Raman spectroscopy was used to examine the structure of barium titanium oxide thin films grown by metal-organic chemical vapor deposition (MOCVD) and laser-assisted deposition. The spectra were compared with the spectra of a ceramic specimen and a single crystal. Raman peaks specific to the tetragonal ferroelectric phase of BaTiO3 were seen in the spectra of several films. Other Raman peaks were ascribed to impurity (non-BaTiO3) phases in the films or to the substrates (fused quartz, MgO). Some of the Raman peaks showed a strong polarization dependence. The MOCVD films were also characterized by x-ray diffraction, energy-dispersive x-ray spectroscopy, and transmission electron microscopy. The film-to-film variation of the strength of BaTiO3 features in the Raman spectrum, relative to impurity-phase features, was qualitatively consistent with the x-ray diffraction and electron microscopy results. Spatially resolved Raman measurements showed that the structure of the laser-deposited film varies significantly over the deposited area. The temperature dependencies of the Raman spectra of two MOCVD films were examined in the 25–175 °C range. Raman peaks due to the tetragonal phase of BaTiO3 were observed at temperatures well above the Curie temperature of bulk single-crystal BaTiO3 (132 °C). This observation suggests that the tetragonal ferroelectric phase is stabilized by an anisotropic film-substrate interaction that gives rise to a two-dimensional stress in the plane of the film.
Articles you may be interested inDispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range A prism coupling method was used to measure the ordinary (n o ) and extraordinary (n e ) refractive indices of Al x Ga 1Ϫx N films, grown by hydride vapor phase epitaxy ͑HVPE͒ and metalorganic chemical vapor deposition ͑MOCVD͒ on sapphire, at several discrete wavelengths from 442 nm to 1064 nm. In addition, spectroscopic transmittance and reflectance, correlated with the prism coupling results, were used to measure n o as a continuous function of wavelength between the band gap of each sample ͑255 nm to 364 nm, depending on Al fraction͒ and 2500 nm. The Al mole fractions ͑x͒, determined by energy dispersive x-ray spectroscopy ͑EDS͒, were xϭ0.144, 0.234, 0.279, 0.363, 0.593, and 0.657 for the HVPE-grown samples, and xϭ0.000, 0.419, 0.507, 0.618, 0.660, and 0.666 for the MOCVD-grown samples. The maximum standard uncertainty in the EDS-determined value of x was Ϯ0.02. The maximum standard uncertainty in the refractive indices measured by prism coupling was Ϯ0.005 and a one-Sellmeier-term equation was adequate to fit the wavelength dependence of n e from 442 nm to 1064 nm. Due to the spectral proximity of the absorption edge, the wavelength dependence of n o measured by spectroscopic transmittance/ reflectance ͑correlated with the prism-coupling results͒, from the band gap of each sample to 2500 nm, was fit with a two-Sellmeier-term equation.
Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility (μ) and density (σs) of negative surface charge for c-axis oriented Si-doped GaN nanowires (NWs). In this approach, we assumed that σs was responsible for the equilibrium surface band bending (∅) and surface depletion in the absence of illumination. The NWs were grown by molecular beam epitaxy to a length of approximately 10 μm and exhibited negligible taper. The free carrier concentration (N) was separately measured using Raman scattering which yielded N = (2.5 ± 0.3) × 1017 cm−3 for the growth batch studied under 325 nm excitation. Saturation of the PC was interpreted as a flatband condition whereby ∅ was eliminated via the injection of photogenerated holes. Measurements of dark and saturated photocurrents, N, NW dimensions, and dimensional uncertainties, were used as input to a temperature-dependent cylindrical Poisson equation based model, yielding σs in the range of (3.5 to 7.5) × 1011 cm−2 and μ in the range of (850 to 2100) cm2/(V s) across the (75 to 194) nm span of individual NW diameters examined. Data illustrating the spectral dependence and polarization dependence of the PC are also presented. Back-gating these devices, and devices from other growth batches, as field effect transistors (FETs) was found to not be a reliable means to estimate transport parameters (e.g., μ and σs) due to long-term current drift. The current drift was ascribed to screening of the FET back gate by injected positive charge. We describe how these gate charging effects can be exploited as a means to hasten the otherwise long recovery time of NW devices used as photoconductive detectors. Additionally, we present data illustrating comparative drift effects under vacuum, room air, and dry air for both back-gated NW FETs and top-gated NW MESFETs.
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