“…The calculus was made for the outer and inner static menisci in silicon case using R gi ¼ 42 Â 10 À4 m; R ge ¼ 48 Â 10 À4 m and a e c ¼ a i c ¼ 301. The values for R gi , R ge are those which have been used by Erris et al [1] and the value of the contact angle (301) is the smallest admissible value for silicon according to Yang et al [18]. The numerical values of the pressure limit, given by the above-established formula is p e oÀ3309 Pa the outer meniscus is convex and the growth angle is achieved on it at a point which belongs to the interval (45 Â 10 À4 ; 48 Â 10 À4 ) m. À3309op e o75 Pa the outer meniscus is convex at R ge ¼ 48 Â 10 À4 m. 75op e o197.84 Pa the outer meniscus is concave at R ge ¼ 48 Â 10 À4 m. 197.84op e [Pa] the outer meniscus is concave and the growth angle is not achieved on it p i oÀ3477 Pa, the inner meniscus is convex and the growth angle is achieved on it at a point which belongs to the interval [42 Â 10 À4 ; 45 Â 10 À4 ) m. À3477op i o 85.7 Pa the inner meniscus is convex at R gi ¼ 42 Â 10 À4 m. À85.7op i o209.27 Pa the inner meniscus is concave at R gi ¼ 42 Â 10 À4 m. 209.27op i [Pa] the inner meniscus is concave and the growth angle is not achieved on it.…”