Model based, pulling rate, thermal and capillary conditions setting for silicon tube growth

Model based computation of the impurity distribution in the wall of a tube grown from the melt by the edge-defined film-fed growth technique

“…It was shown also that this geometric configuration is asymptotically stable [16]. The geometric configuration considered for computation is the above described meniscus and a part of the capillary channel.…”

“…The meaning of the symbols, units and data, which were used, are given in Table 1 [16]. The computed Al concentrations at the inner face, center and outer face of the tube wall in different regimes (complete regime; ignoring thermodiffusion; ignoring the thermal regime completely) are given in the Table 2.…”

“…Such a computation could be interesting because in [16] it was shown that the axis-symmetric (2D) domain representing the static stable meniscus can be the same for different thermal regimes pulling rates and capillary channels. Such regimes for Si cylindrical tube of given size were identified in [16].…”