2012 IEEE International Symposium on Circuits and Systems 2012
DOI: 10.1109/iscas.2012.6271557
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Memristors and memristive circuits - an overview

Abstract: The memristor as a basic circuit element has drawn wide attention in the international research community of electrical engineers, physicists, and biologists. Memristors -being prominent for the realization of nonvolatile VLSI resistive random access memories (RRAM) and for their applicability as synapses in neuromorphic systems provide even further surprising properties in electric circuits, which opens up new horizons to future applications.This article is in accordance with the special session of ISCAS2012 … Show more

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Cited by 24 publications
(29 citation statements)
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References 36 publications
(48 reference statements)
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“…The time-domain impedance, shown in Figure 4B, reproduces the analytical time-domain input impedance of the circuit given by Equation 14. The extracted values of capacitance are C = 30nF ( ≤ Φ) and C = 60nF ( > Φ), matching perfectly the predicted values according to Equation 10. Additional results showing the response of the circuit to a triangular input signal are shown in Figure 4C.…”
Section: Miller Effect Memcapacitor Circuit Demonstratorsupporting
confidence: 66%
See 1 more Smart Citation
“…The time-domain impedance, shown in Figure 4B, reproduces the analytical time-domain input impedance of the circuit given by Equation 14. The extracted values of capacitance are C = 30nF ( ≤ Φ) and C = 60nF ( > Φ), matching perfectly the predicted values according to Equation 10. Additional results showing the response of the circuit to a triangular input signal are shown in Figure 4C.…”
Section: Miller Effect Memcapacitor Circuit Demonstratorsupporting
confidence: 66%
“…7,8 In 2009, the concept of passive memory devices was revisited, 9 proposing the memcapacitor and meminductor as a part of a larger essential family of circuit elements for developing a rigorous mathematical theory of nonlinear circuits. 10 The memcapacitance (memory capacitance), C M , that will be the objective of this work, establishes the electrical relation between the time integral of the charge ( ) and the time integral of the voltage (namely, flux, ; see Figure 1):…”
Section: Introductionmentioning
confidence: 99%
“…An ideal memristor is thus defined by state-dependent Ohm's law. Memristor theory and modeling can be found, for example, in [2].…”
Section: Introductionmentioning
confidence: 99%
“…In the literature, we studied different types of Static Random Access Memory (SRAM) cells like CMOS based SRAM cells [1], Field Effect Transistor (FinFET) based SRAM cells [2,3], Carbon Nanotube FET (CNTFET) based SRAM cells [4], SRAM cell based on Transmission gates [5]. It also gave birth to a new fundamental element, called Memristor [6][7][8] other than the Resistor, Inductor and the Capacitor. Memristor based technology is a new technology that came into the market in order to create non-volatile and low power operated memories of smaller size.…”
Section: Introductionmentioning
confidence: 99%