Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi

Vardar, Gulin; Paleg, S. W.; Warren, Michael V.; Kang, Myungkoo; Jeon, Sohee; Goldman, R. S.

doi:10.1063/1.4789369

Cited by 75 publications

(60 citation statements)

References 24 publications

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“…The theoretical model using Monte Carlo simulation to analyze the Ga droplet formation on GaAs surface was discussed in reference [126]. Experiment in reference [127] confirmed that the Ga-Bi droplets coexist under a Ga-rich growth regime of GaAsBi. Further selective etching process also confirms that the surface droplets often include Ga as well as Bi.…”

Section: Bi Dropletsmentioning

confidence: 95%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Section: Bi Dropletsmentioning

confidence: 95%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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“…A relatively large Bi flux was used, twice that of As, while maintaining an approximately equal flux of As and Ga. This places the growth conditions well within the Bi saturation regime, 10 where an alloying limit is imposed by the low miscibility of Bi into GaAs. As a consequence, liquid Bi droplets form ( Fig.…”

Section: Methodsmentioning

confidence: 99%

“…1(a) shows a representative scanning electron micrograph (SEM) of the GaAsBi sample surface, revealing a relatively smooth GaAsBi epitaxial growth overgrown by metallic surface droplets and the formation of in-plane nanotracks. EDS measurements indicated pure Bi droplets are formed on the GaAsBi surface (no final Ga/Bi dual composites 10 ), which is indicative of Bi-rich growth and attributed to Bi segregation. 10 The bottom inset in Fig.…”

mentioning

confidence: 99%

“…[6][7][8][9] These appealing characteristics are due to the massive disparity in the atomic radii and electronegativity of the Bi and As atoms, which also impose physical and technical challenges for growers; Bi exhibits a strong tendency to surface-segregate and form surface droplets. 10 In the liquid phase, Bi droplets are known to ultimately act as catalysts to GaAs-based VLS growth.…”

Section: Introductionmentioning

confidence: 99%

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Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

et al. 2015

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In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation "hot spot" at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled nonmonotonous structure In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation "hot spot" at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled non-monotonous structure.

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“…Bi serves as a surfactant to enable a smooth growth of the subsequent GaAs growth, as well as GaAsBi growth. [17][18][19] Surplus Bi that segregates at the surface is undesirable and hinders the growth of uniform GaAsBi layers. 20 This relative low crystal quality will seriously facilitate the high J th value, especially for the very low temperature growth of the GaAs barrier layers in the QW structure.…”

Section: Fig 2 Depicts Both Voltage-current (V-imentioning

confidence: 99%

Electrically injected GaAsBi/GaAs single quantum well laser diodes

Liu

Pan

et al. 2017

AIP Advances

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We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm -1 and transparency current density of 196 A/cm 2 . The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77∼150 K, and reduced to 90 K in the range of 150∼273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77∼273 K.

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Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi

Cited by 75 publications

References 24 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

Electrically injected GaAsBi/GaAs single quantum well laser diodes

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