We have examined the mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi. We consider the role of the transition from group-V-rich to group-III-rich conditions, i.e., the stoichiometry threshold, in the presence of Bi. For As-rich GaAsBi growth, Bi acts as a surfactant, leading to the formation of droplet-free GaAsBi films. For films within 10% of the stoichiometric GaAsBi growth regime, surface Ga droplets are observed. However, for Ga-rich GaAsBi growth, Bi acts as an anti-surfactant, inducing Ga-Bi droplet formation. We propose a growth mechanism based upon the growth-rate-dependence of the stoichiometry threshold for GaAsBi.

A photoacoustic module (PAM) for methane detection was developed by combining a novel 3.2 μm interband cascade light emitting device (ICLED) with a compact differential photoacoustic cell. The ICLED with a 22-stage interband cascade active core emitted a collimated power of ~700 μW. A concave Al-coat reflector was positioned adjacent to the photoacoustic cell to enhance the gas absorption length. Assembly of the ICLED and reflector with the photoacoustic cell resulted in a robust and portable PAM without any moving parts. The PAM performance was evaluated in terms of operating pressure, sensitivity and linearity. A 1σ detection limit of 3.6 ppmv was achieved with a 1-s integration time.

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We report interband cascade vertical-cavity surface-emitting lasers (ICVCSELs) that operate in pulsed mode at temperatures up to 70 °C. Their emission at λ ≈ 3.4 μm extends considerably the previous longest wavelength of 3.0 μm for an electrically-pumped vertical-cavity surface-emitting laser operating at room temperature. The output from mesas having diameters ranging from 30 to 60 μm (with emission aperture diameters of 20–50 μm) is circularly symmetric, and the threshold current densities at T = 25 °C are as low as 390 A/cm2. However, the differential slope efficiencies are low, e.g., ≤50 mW/A at T = 25 °C, due to loss in the top and bottom mirrors and reduced current efficiency. The smallest device operates in a single spectral mode despite having an emission aperture much wider than the wavelength.

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