Crystal Growth 1974
DOI: 10.1007/978-1-4757-1272-8_1
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Mechanisms in Vapour Epitaxy of Semiconductors

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Cited by 15 publications
(14 citation statements)
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“…Manuscript submitted April 15, 1996; revised manuscript received Jan. 3, 1997. This was Paper 721 presented at the Chicago, IL, Meeting of the Society, Oct. [8][9][10][11][12][13] 1995.…”
Section: Acknowledgmentsmentioning
confidence: 99%
“…Manuscript submitted April 15, 1996; revised manuscript received Jan. 3, 1997. This was Paper 721 presented at the Chicago, IL, Meeting of the Society, Oct. [8][9][10][11][12][13] 1995.…”
Section: Acknowledgmentsmentioning
confidence: 99%
“…Since higher thermal energy increases the Ga and In desorption rates, a growth rate reduction at high temperatures is expected due to a higher back‐reaction. This is indicative of the thermodynamic regime . In fact, etching of the GaAs substrate occurs at this temperature (670 °C) when lower GaCl pressure is used (samples A6 and B6), as shown in Table .…”
Section: Resultsmentioning
confidence: 84%
“…[17] The apparent activation energy obtained by linear plot is approximately 1.58 kcal mol ±1 , as shown in Figure 3. Hence the deposition reaction was controlled by gas-phase mass-transfer in these experiments Figure 4 shows the resistivity and the rms roughness of Pt films deposited at various deposition temperatures.…”
Section: ±1mentioning
confidence: 98%