Mechanisms in Vapour Epitaxy of Semiconductors

Shaw, Don W.

doi:10.1007/978-1-4757-1272-8_1

Cited by 15 publications

(14 citation statements)

References 63 publications

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“…Manuscript submitted April 15, 1996; revised manuscript received Jan. 3, 1997. This was Paper 721 presented at the Chicago, IL, Meeting of the Society, Oct. [8][9][10][11][12][13] 1995.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Characterization of RuO2 Thin Films Prepared by Hot‐Wall Metallorganic Chemical Vapor Deposition

Shin

Yoon

1997

J. Electrochem. Soc.

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RuO2 thin films were deposited on SiO2/normalSi substrate at low temperatures by hot‐wall metallorganic chemical vapor deposition using the ruthenocene and oxygen gas mixtures. The preferred orientation of films varied from (200) to (101) as the film thickness increases above 150 nm irrespective of the deposition conditions. RuO2 deposition reaction was controlled by gas‐phase mass‐transfer in these experiments. The film resistivity increased with increasing oxygen flow rates. The increase of film resistivity with increasing oxygen flow rates was due to the contribution of carrier concentration rather than that of carrier mobility. The film resistivity with increasing the annealing temperatures decreased because of densification of films.

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“…Manuscript submitted April 15, 1996; revised manuscript received Jan. 3, 1997. This was Paper 721 presented at the Chicago, IL, Meeting of the Society, Oct. [8][9][10][11][12][13] 1995.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Characterization of RuO2 Thin Films Prepared by Hot‐Wall Metallorganic Chemical Vapor Deposition

Shin

Yoon

1997

J. Electrochem. Soc.

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“…Since higher thermal energy increases the Ga and In desorption rates, a growth rate reduction at high temperatures is expected due to a higher back‐reaction. This is indicative of the thermodynamic regime . In fact, etching of the GaAs substrate occurs at this temperature (670 °C) when lower GaCl pressure is used (samples A6 and B6), as shown in Table .…”

Section: Resultsmentioning

confidence: 84%

Epitaxial lateral overgrowth of Ga_xIn_1 − xP toward direct Ga_xIn_1 − xP/Si heterojunction

Omanakuttan

Stergiakis

Sahgal

et al. 2017

Physica Status Solidi (a)

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The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of GaxIn(1 − x)P layer and their dependence on the process parameters were investigated by X‐ray diffraction, including reciprocal lattice mapping (XRD‐RLM), scanning electron microscopy equipped with energy‐dispersive X‐ray spectroscopy (SEM‐EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the GaxIn(1 − x)P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG GaxIn(1 − x)P layer, and Si incorporation in the vicinity of direct GaxIn(1 − x)P/Si heterojunction from CELOG are observed in the SEM‐EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross‐sectional micro‐PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si.

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“…[17] The apparent activation energy obtained by linear plot is approximately 1.58 kcal mol ±1 , as shown in Figure 3. Hence the deposition reaction was controlled by gas-phase mass-transfer in these experiments Figure 4 shows the resistivity and the rms roughness of Pt films deposited at various deposition temperatures.…”

Section: ±1mentioning

confidence: 98%

Pt Thin Film Collectors Prepared by Liquid‐Delivery Metal–Organic CVD Using Pt(C₂H₅C₅H₄)(CH₃)₃ for LiCoO₂ Thin Film Cathodes

Choi¹,

Choi²,

Yoon³

2003

Chemical Vapor Deposition

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Platinum thin film collectors were deposited onto p-type Si(100) planar and trench substrates by liquid-delivery metal±organ-ic (LD-MO) CVD using Pt(EtCp)Me 3 , Pt(C 2 H 5 C 5 H 4 )(CH 3 ) 3 , for microbatteries. The resistivity and root-mean-square (rms) roughness of Pt thin films with (111) preferred orientation increased with the increase of both deposition temperature and system pressure. The deposition of Pt thin films was controlled by a gas-phase mass-transfer mechanism and Pt thin films deposited at 350 C showed the lowest resistivity, rms roughness, and the highest step coverage, 57 %, in trench structure. The LiCoO 2 cathode films (step coverage = 51 %) deposited on the trench Pt collector showed an increase in discharge capacity of approximately two and half times that of the planar Pt collector. Platinum thin films deposited by LD-MOCVD have a possible application as collector materials for LiCoO 2 thin film cathodes.

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Mechanisms in Vapour Epitaxy of Semiconductors

Cited by 15 publications

References 63 publications

Characterization of RuO2 Thin Films Prepared by Hot‐Wall Metallorganic Chemical Vapor Deposition

Characterization of RuO2 Thin Films Prepared by Hot‐Wall Metallorganic Chemical Vapor Deposition

Epitaxial lateral overgrowth of Ga_xIn_1 − xP toward direct Ga_xIn_1 − xP/Si heterojunction

Pt Thin Film Collectors Prepared by Liquid‐Delivery Metal–Organic CVD Using Pt(C₂H₅C₅H₄)(CH₃)₃ for LiCoO₂ Thin Film Cathodes

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Mechanisms in Vapour Epitaxy of Semiconductors

Cited by 15 publications

References 63 publications

Characterization of RuO2 Thin Films Prepared by Hot‐Wall Metallorganic Chemical Vapor Deposition

Characterization of RuO2 Thin Films Prepared by Hot‐Wall Metallorganic Chemical Vapor Deposition

Epitaxial lateral overgrowth of GaxIn1 − xP toward direct GaxIn1 − xP/Si heterojunction

Pt Thin Film Collectors Prepared by Liquid‐Delivery Metal–Organic CVD Using Pt(C2H5C5H4)(CH3)3 for LiCoO2 Thin Film Cathodes

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Product

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Epitaxial lateral overgrowth of Ga_xIn_1 − xP toward direct Ga_xIn_1 − xP/Si heterojunction

Pt Thin Film Collectors Prepared by Liquid‐Delivery Metal–Organic CVD Using Pt(C₂H₅C₅H₄)(CH₃)₃ for LiCoO₂ Thin Film Cathodes