Room temperature surface emission is realized on a large area (1.5 mm × 1.5 mm) photonic crystal quantum cascade laser (PhC-QCL) driven under pulsed mode, at the wavelength around 8.75 µm. By introducing in-plane asymmetry to the pillar shape and optimizing the current injection with a grid-like window contact, the maximum peak power of the PhC-QCL is up to 5 W. The surface emitting beam has a crossing shape with 10 • divergence.
An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm2 at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm2, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.
Measurements of beam stability for mid-infrared (IR)-emitting quantum cascade lasers (QCLs) are important for applications that require the beam to travel through air to remote targets, such as free-space communication links. We report beam-quality measurement results of narrow-ridge, 4.6 µm-emitting buried-heterostructure (BH) QCLs fabricated using ICP etching and HVPE regrowth. Beam-quality measurements under QCW operation exhibit M2 < 1.2 up to 1 W for ∼5 µm-wide ridges. 5 µm-wide devices display some small degree of centroid motion with increasing output power (< 0.125 mrad), which corresponds to a targeting error of ∼1.25 cm over a distance of 100 m.
We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method.
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