Mechanisms for Hydrolysis of Silicon Nanomembranes as Used in Bioresorbable Electronics

Yin, Lan; Farimani, Amir Barati; Min, Kyoungmin; Nandigana, Vishal V. R.; Lam, Jasper; Lee, Yoon Kyeung; Aluru, N. R.; Rogers, John A.

doi:10.1002/adma.201404579

Cited by 101 publications

(135 citation statements)

References 48 publications

Supporting

Mentioning

109

Contrasting

Order By: Relevance

“…The w2 remains as OH − for an additional 3 ns and forms a water molecule by bonding with another H + at t = 31 ns. The conversion of SiðOHÞ 2+ 2 → SiðOHÞ 4 finishes at 80-90 ns at T = 37°C, such that the final product of dissolution is silicic acid, similar to findings from previous studies of dissolution of bulk Si using comparable models (49). These reaction products appear within the 35-ns timescale of the simulations presented here under accelerated conditions, that is, at 100°C, SiðOHÞ Fig.…”

Section: Chemical and Physical Effects In Electrical Leakage Through supporting

confidence: 85%

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

Fang

Zhao

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

Self Cite

191

196

View full text Add to dashboard Cite

Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants.

show abstract

Section: Chemical and Physical Effects In Electrical Leakage Through supporting

confidence: 85%

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

Fang

Zhao

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

Self Cite

191

196

View full text Add to dashboard Cite

show abstract

“…2,29,30 This same equation does not fully describe the results reported here, as summarized in Figure S2a in the SI and Table 1 and in previous dissolution studies of mono-Si. 2 …”

Section: Resultsmentioning

confidence: 65%

“…We note that the concentrations of ions such as Cl − and PO 4 3− likely influence the values of E A and k 0 , as for the case of mono-Si. 29 The values of R for poly-Si, a-Si, SiGe, and Ge are 2.8, 4.1, 0.1, and 3.1 nm/day, respectively, in buffer solutions at pH 7.4 and 37°C. Poly-Si dissolves at a rate similar to that observed for mono-Si (2.9 nm/day), while a-Si and Ge dissolve somewhat more quickly.…”

Section: Resultsmentioning

confidence: 96%

Dissolution Chemistry and Biocompatibility of Silicon- and Germanium-Based Semiconductors for Transient Electronics

Kang¹,

Park

Kim³

et al. 2015

ACS Appl. Mater. Interfaces

Self Cite

153

165

View full text Add to dashboard Cite

Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

show abstract

“…According to previous studies, the dissolution rate of monolayer MoS 2 or Si nanomembranes increases with increasing PBS temperature 20,47 . In view of the dissolution kinetics of monolayer MoS 2 (~200 nm grain size) in PBS solution, a high concentration, pH, or temperature results in a high dissolution speed 20 .…”

Section: Resultsmentioning

confidence: 68%

Degradation behaviors and mechanisms of MoS2 crystals relevant to bioabsorbable electronics

et al. 2018

View full text Add to dashboard Cite

Monolayer molybdenum disulfide (MoS 2 ) exhibits unique semiconducting and bioresorption properties, giving this material enormous potential for electronic/biomedical applications, such as bioabsorbable electronics. In this regard, understanding the degradation performance of monolayer MoS 2 in biofluids allows modulation of the properties and lifetime of related bioabsorbable devices and systems. Herein, the degradation behaviors and mechanisms of monolayer MoS 2 crystals with different misorientation angles are explored. High-angle grain boundaries (HAGBs) biodegrade faster than low-angle grain boundaries (LAGBs), exhibiting degraded edges with wedge and zigzag shapes, respectively. Triangular pits that formed in the degraded grains have orientations opposite to those of the parent crystals, and these pits grow into larger pits laterally. These behaviors indicate that the degradation is induced and propagated based on intrinsic defects, such as grain boundaries and point defects, because of their high chemical reactivity due to lattice breakage and the formation of dangling bonds. High densities of dislocations and point defects lead to high chemical reactivity and faster degradation. The structural cause of MoS 2 degradation is studied, and a feasible approach to study changes in the properties and lifetime of MoS 2 by controlling the defect type and density is presented. The results can thus be used to promote the widespread use of two-dimensional materials in bioabsorption applications.

show abstract

Mechanisms for Hydrolysis of Silicon Nanomembranes as Used in Bioresorbable Electronics

Cited by 101 publications

References 48 publications

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

Dissolution Chemistry and Biocompatibility of Silicon- and Germanium-Based Semiconductors for Transient Electronics

Degradation behaviors and mechanisms of MoS2 crystals relevant to bioabsorbable electronics

Contact Info

Product

Resources

About