Dissolution Chemistry and Biocompatibility of Silicon- and Germanium-Based Semiconductors for Transient Electronics

Kang, Seung Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk Won; Cheng, Huanyu; Shin, Jiho; Chung, Sang‐Jin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung Mi; Rogers, John A.

doi:10.1021/acsami.5b02526

Cited by 147 publications

(163 citation statements)

References 41 publications

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“…Regarding those patients who develop a new LBBB after TAVR, permanent pacing is provided a class IIb recommendation . Given the pattern for decreased utilization of pacing and dependency with time, the development of stable temporary pacemakers may be a potential option to help address the need for permanent pacing while allowing patients to be discharged from the hospital setting …”

Section: Discussionmentioning

confidence: 99%

Conduction recovery following pacemaker implantation after transcatheter aortic valve replacement

Kaplan

Yadlapati

Cantey

et al. 2019

Pacing Clinical Electrophis

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Background Transcatheter aortic valve replacement (TAVR) is increasingly used to treat severe aortic stenosis. A frequent complication of TAVR is high‐grade or complete atrioventricular (AV) block requiring a permanent pacemaker (PPM). There are little data on the long‐term dependency on pacing after TAVR. The objective of this study was to determine the proportion of patients receiving a PPM for high‐grade or complete AV block after TAVR who remain dependent on the PPM in follow‐up and to determine any risk factors for, particularly the effect of postballoon dilation (PBD) on, pacemaker dependency. Methods Of 594 consecutive patients without prior PPM undergoing TAVR (81.9% balloon‐expandable, 18.1% self‐expandable valve), 67 (13.1%) received a PPM after TAVR. PPM dependency was defined as AV block with a ventricular escape rate of ≤ 40 beats/min. Patient and procedural characteristics were examined according to PPM dependency status. Results Of the 67 patients who received a PPM within 10 days after TAVR, 27/67 (40.3%) were dependent at first follow‐up and only 9/41 (21.9%) at 1 year. PPM dependency was more common after a self‐expanding valve (76.9% vs 31.5%, P < 0.01), in those who underwent PBD (66.7% vs 24.4%, P < 0.01), and in patients in persistent complete AV block at PPM implantation (62.5% vs 7.4%, P < 0.01). Conclusions Fewer than half of patients who receive a new PPM following TAVR are pacemaker dependent at early follow‐up (< 30 days). The use of self‐expanding valves and PBD are associated with a markedly increased risk of PPM dependency.

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Section: Discussionmentioning

confidence: 99%

Conduction recovery following pacemaker implantation after transcatheter aortic valve replacement

Kaplan

Yadlapati

Cantey

et al. 2019

Pacing Clinical Electrophis

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“…Sometimes referred to collectively as transient electronics, these types of devices can be constructed by using designer materials, such as specially formulated polymers or natural products (13)(14)(15)(16), or clever combinations of established materials, well-aligned to existing infrastructure (e.g., device designs, circuit topologies, manufacturing capabilities) in conventional, nontransient electronics (17)(18)(19). The latter approach is particularly attractive due to recent research findings that establish many options in high-quality electronic materials for this purpose, ranging from semiconductor-grade monocrystalline silicon (hydrolysis to hydrogen gas and silicic acid) to dissolvable metals (e.g., Mg, W, Mo) and water-soluble dielectrics (e.g., MgO, SiO 2 , Si 3 N 4 ) (19)(20)(21)(22)(23). Carefully selected device designs and encapsulation layers allow electronic systems formed with these materials to operate in a stable, high-performance manner for a desired time and then to degrade and disappear completely, at a molecular level, to biocompatible and ecocompatible end products.…”

mentioning

confidence: 99%

Materials and processing approaches for foundry-compatible transient electronics

Chang

Fang

Bower³

et al. 2017

Proc. Natl. Acad. Sci. U.S.A.

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Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for "green" electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-theart silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.soft electronics | biodegradable electronics | transfer printing | undercut etching | hydrolysis S emiconductor technology is increasingly essential to nearly all aspects of modern society, with projections of market sizes that will exceed $7 trillion in 2017, equivalent to 10% of the world's gross domestic product (1-4). The rapid and accelerating pace of innovation in this area leads to increases in the frequency with which consumers upgrade their devices, thereby contributing to the production of >50 million tons of electronic waste (e-waste) each year (5, 6). Furthermore, the anticipated emergence of electronics for internet-of-things applications, along with the continued proliferation of radio frequency (RF) identification tags and other high-volume electronic goods, create daunting challenges with the management of this e-waste (7, 8). These considerations motivate research into forms of electronics that can degrade naturally into the environment to harmless end products. Such technology is also of interest for other, unique classes of applications, ranging from biodegradable, temporary electronic implants to hardware secure data systems and unrecoverable, field-deployed devices (9-12). Sometimes referred to collectively as transient electronics, these types of devices can be constructed by using designer materials, such as specially formulated polymers or natural products (13-16), or clever combinations of established materials, well-aligned to existing ...

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“…The abundance and biocompatibility of Si, combined with its porosity as demonstrated in this study, make it an attractive drug delivery carrier. Drug loading and release experiments with porous Si were conducted with ibuprofen as a model drug.…”

Section: Resultsmentioning

confidence: 89%

Metallothermic Reduction of Silica Nanoparticles to Porous Silicon for Drug Delivery Using New and Existing Reductants

Lai

Thompson

Dasog

2018

Chemistry A European J

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Abstract:In this study, the influence of metals (Mg, Al, and Ca) and reaction conditions (time, temperature, and metal grain size) on the metallothermic reduction of Stöber silica nanoparticles (NPs) to form porous Si was explored. Mg metal was found to be an effective reducing agent even at temperatures below its melting point; however, it also induced a high degree of structural damage and morphology change. Al was effective at reducing silica NPs only at its melting point and higher temperatures, but the resulting particles retained a higher degree of structural morphology as compared to those reduced using Mg. Ca was found to be ineffective in reducing silica. A new reductant, a mixture of 70% Mg and 30% Al, was found to induce the least amount of morphology change, and the reactions proceeded at temperatures (450 °C) lower than those required by Mg or Al individually. Furthermore, porous Si-NPs obtained using Mg, Al, and the mixture of 70% Mg and 30% Al as reductants were investigated as carriers for ibuprofen loading and release. Porous Si obtained from Mg and Mg/Al mixture reductions showed higher drug loading and a sustained drug release profile whereas porous Si obtained from Al reduction had lower loading and showed a conventional release profile over 24 hours.

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Dissolution Chemistry and Biocompatibility of Silicon- and Germanium-Based Semiconductors for Transient Electronics

Cited by 147 publications

References 41 publications

Conduction recovery following pacemaker implantation after transcatheter aortic valve replacement

Conduction recovery following pacemaker implantation after transcatheter aortic valve replacement

Materials and processing approaches for foundry-compatible transient electronics

Metallothermic Reduction of Silica Nanoparticles to Porous Silicon for Drug Delivery Using New and Existing Reductants

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