2003
DOI: 10.1103/physrevb.68.014437
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Mechanism of the exchange-bias field in ferromagnetic and antiferromagnetic bilayers

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Cited by 45 publications
(41 citation statements)
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“…Furthermore, the LMTO band calculations including the spin-orbit interaction were performed in order to investigate the magnetocrystalline anisotropy energy (MAE) because the MAE in the antiferromagnetic materials plays an important role in the exchange biasing-field in spin valves. 21) Furthermore, the theoretical calculations of the MAE give the reason why the magnetic phase diagram of the MnPt alloy system is rather complicated, compared with that of other L1 0 -type Mn alloy systems, changing the magnetocrystalline anisotropy with the temperature or the composition.…”
Section: Introductionmentioning
confidence: 99%
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“…Furthermore, the LMTO band calculations including the spin-orbit interaction were performed in order to investigate the magnetocrystalline anisotropy energy (MAE) because the MAE in the antiferromagnetic materials plays an important role in the exchange biasing-field in spin valves. 21) Furthermore, the theoretical calculations of the MAE give the reason why the magnetic phase diagram of the MnPt alloy system is rather complicated, compared with that of other L1 0 -type Mn alloy systems, changing the magnetocrystalline anisotropy with the temperature or the composition.…”
Section: Introductionmentioning
confidence: 99%
“…[15][16][17][18] In order to develop the excellent properties for GMR and TMR devices, however, the investigations on fundamental magnetic properties for these practical antiferromagets have been highly desired, because the exchange biasing characteristics are closely related to the spin structures, magnetocrystalline anisotropy energy (MAE) and the magnitude of T N of the antiferromagnetic materials. [19][20][21] In addition, recent interest is how to design the devices with a low electrical resistance at room temperature, 22,23) especially in the current perpendicular to the plane (CPP)-type spin valves. [24][25][26][27] Because the antiferromagnetic layer is relatively thick, compared with other magnetic layer in the GMR and TMR devices, the reduction of its electrical resistivity is important for such devices.…”
Section: Introductionmentioning
confidence: 99%
“…As seen from the figure, the AFM/FM bilayer with the 1Q, 2Q or AF-1 structures only displays the coercivity in the magnetization loop without any shift. That is, only the 3Q structure can realize the loop shift caused by the unidirectional exchange-bias field 53) . At first glance, the above-mentioned model seems to be invalid for the formation of unidirectional exchange-bias field in the collinear systems.…”
Section: L10-type Mn Alloys and Exchange Couplingmentioning
confidence: 99%
“…As a Fig. 9 Spin structures in the magnetic primitive cell of the  (fcc)-phase lattice and magnetization loops of the AFM/FM bilayer for 1Q, 2Q, 3Q and AF-1 spin structures 53) .…”
Section: L10-type Mn Alloys and Exchange Couplingmentioning
confidence: 99%
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