Mechanism of submonolayer oxide formation on silicon surfaces upon thermal oxidation

Borman, V. D.; Gusev, Evgeni; Lebedinski, Yu. Yu.; Troyan, V. I.

doi:10.1103/physrevb.49.5415

Cited by 45 publications

(19 citation statements)

References 48 publications

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“…This conception may have motivated researchers to construct models to describe the oxidations in the high-temperature region based on the surface diffusion and reactions [5,6]. In particular, the single-oxide-species (SOS) and the dual-oxide-species (DOS) model proposed by Engstrom et al [6] seem to cover most of the essentials of the surface processes relevant to oxidation.…”

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confidence: 99%

“…Figure 2 shows the pressure dependence of t 0 . Equations (4), (5), and (7) indicate that t 0 should be inversely proportional to P in the low-temperature region and should be inversely proportional to P 2 in the hightemperature region. The latter power dependence reflects our choice of the reaction order in the third term in Eq.…”

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confidence: 99%

“…(5). From the equation, the overall activation energy is given by E c 2 E d 1 E a Լ E c 2 E d 20.144 eV.…”

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Initial Oxidation of Si(100)-(2×1)as an Autocatalytic Reaction

et al. 1999

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Time evolutions of O 2p intensity from real-time ultraviolet photoelectron spectroscopy were obtained for the initial oxidation of Si(100)-͑2 3 1͒ surfaces at oxygen pressures P 7.5 3 10 28 2.8 3 10 26 Torr and temperatures T RT 2 720 ± C. Despite the separation of the growth mode into the Langmuir-Hinshelwood mode in the low-T -high-P region and the 2D-island growth in the high-Tlow-P region, they were unifiedly described by a single rate equation for the oxide coverage u, which assumes two types of surface oxygen monomers and the number density of oxide islands that scales with u͑1 2 u͒ 2 . [S0031-9007(99)08678-0]

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Initial Oxidation of Si(100)-(2×1)as an Autocatalytic Reaction

et al. 1999

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“…Therefore, the surface of standard silicon plates can be considered to be smooth but containing a number of micropores. Such a relief was often observed in microscopic studies of silicon surface, including the Si (100) used by us [5].…”

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Size effect and mechanochemical contraction of the Si(100) specimens

et al. 2012

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Variation of thickness of specimens of single crystalline silicon Si(100) prepared by scribing of the water of 100 mm diameter to parts of smaller size under atmospheric conditions is studied. It is shown that the thickness of specimens having small surface (~1 cm 2 ) decreases after scribing by 0.8-1.0% (with the error of measurements < 0.3%). The observed decrease in the thickness is explained by the effect of sorption of vapors of atmospheric moisture in micropores with the decrease in the external surface of specimens of Si(100) (the sorbostriction phenomenon).

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“…An alternative approach, referred to as a kinetic model, has been used to describe the critical conditions deriving from an equality between the growth and decay rates of Si02 clusters on the Si surface [7]. Recently, the initial stage of Si oxidation was considered to be a first-order phase transition [3].…”

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Branching of Critical Conditions for Si(111)-(7×7) Oxidation

Shklyaev

Suzuki

1995

Phys. Rev. Lett.

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From kinetic measurements by optical second harmonic generation of 02 interaction with Si(111)-(7 X 7) at temperatures between 610 and 735 'C and pressures from 10 9 to 10 6 tort, we determine the boundaries for oxide nucleation and for quasiequilibrium between surface phases of oxide and silicon. The distinction between these boundaries rejects the influence of the kinetic parameters of the surface reactions on the critical conditions. At T~700 C, the oxide nucleation requires oxygen pressure well above that required for oxide growth.The study of silicon oxidation near critical conditions has been advanced by recent investigations [1 -4]. The reactions of oxygen with silicon at high temperatures and low 02 pressures is characterized by two regimes: gas phase etching with volatile SiO formation [5] and oxide growth on the surface. The boundary between the regimes is referred to as the critical condition and is described in terms of the critical oxygen pressure (P,), which is a function of the surface temperature (T,), by the equation P, (T,) = Po exp( -AE/kT, ) [6,7]. The activation energy AE and the prefactor I'o were practically independent on the crystallographic orientation of the surface. These values are /s. E = 3.93 eV and Po = 4.4 X 10' torr for the Si(111) surface [7]. However, the critical conditions were shown to depend on the nature of the oxidant; in the case of the Si-N20 interaction, the critical conditions were shifted to much higher pressures and were described by significantly different parameters of AE = 2.14 eV and Po --1.5 X 10 torr [8].Two distinct approaches have been suggested for understanding the existence of critical conditions. In the first, the critical pressure of 02 is derived from an equality between the 02 How adsorbed by the silicon surface and the SiO IIow leaving the surface [9]. This approach has given a semiquantitative agreement with experimental results [6,10]. An alternative approach, referred to as a kinetic model, has been used to describe the critical conditions deriving from an equality between the growth and decay rates of Si02 clusters on the Si surface [7]. Recently, the initial stage of Si oxidation was considered to be a first-order phase transition [3]. An unexpected result obtained with scanning tunneling microscopy (STM) [2,4] and reliection high-energy electron diffraction [1] was the finding that the critical conditions were shifted compared with that expected by extrapolating high temperature data [7]. This shift Feltz, Memmert, and Behm [4] connected with the procedure of data acquisition; with decreasing pressures the times required to build up detectable amounts of surface oxide become much longer than the experimental waiting times at temperatures below 727 C. As a result, they detect clean Si surfaces even at experimental conditions where oxidation of the Si surface should have happened according to extrapolation of high temperature data [6,7].In this Letter we use the optical second harmonic generation (SHG) to monitor in situ the kinetics of Si(ill)-...

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Mechanism of submonolayer oxide formation on silicon surfaces upon thermal oxidation

Cited by 45 publications

References 48 publications

Initial Oxidation of Si(100)-(2×1)as an Autocatalytic Reaction

Initial Oxidation of Si(100)-(2×1)as an Autocatalytic Reaction

Size effect and mechanochemical contraction of the Si(100) specimens

Branching of Critical Conditions for Si(111)-(7×7) Oxidation

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