Initial Oxidation of Si(100)-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:math>as an Autocatalytic Reaction

Suemitsu, Maki; Enta, Yoshiharu; Miyanishi, Y.; Miyamoto, Nobuo

doi:10.1103/physrevlett.82.2334

Cited by 66 publications

(58 citation statements)

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confidence: 83%

“…(3) and a similar equation obtained in the context of silicon oxidation [26], where a sigmoidal behavior was also reported. Although seemingly dealing with a different problem, it has been recently shown that the initial stages of Si(001) oxidation are determined by a combination of a Langmuir-type adsorption and 2D island growth [26,27] in close analogy with our study. Moreover, sigmoidal laws have been reported in the context of nanocrystals growth in solution [28], where recent investigations reveal a complex growth dynamics involving a 2D nucleation and growth process via atomic attachment from the solution phase [29,30].…”

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Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

Luna

Guzmán²,

Trampert³

et al. 2012

Phys. Rev. Lett.

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We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by twodimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species. A central goal of modern materials physics is the control of interfaces down to the atomic level. In particular, the behavior of layered materials depends on the atomicscale structural roughness and chemical mixing across the interface [1]. Although abrupt interfaces between conventional semiconductors (such as III-V compounds) are fabricated and element profiles across these interfaces are obtained with atomic resolution, the relation between the layer growth processes and the parameters governing the interface formation and evolution is not satisfactorily understood. In this respect, there is an ongoing discussion about how interfaces can be quantitatively described on the basis of a growth model and whether there is a minimum interface width.Recently Hulko et al. [2,3] and have shown empirically that experimental concentration profiles in III-V two-dimensional (2D) heterostructures, e.g. quantum wells (QW) grown by molecular beam epitaxy (MBE), can be accurately reproduced by a sigmoidal function of the formHere, x 0 denotes the nominal mole fraction of one of the species, z is the position across the interface along the growth direction, and L is the parameter quantifying the interface width (L is proportional to the widely reported length W , over which the concentration changes from 10% to 90% of its plateau value). Moreover, the accuracy of the sigmoidal fitting seems to be independent of the experimental technique used to obtain the element distribution [2,5,7] and, more interestingly, of the compound semiconductor. In this letter, we show that a sigmoidal profile emerges from a simple model of cooperative growth with 2D island formation. Furthermore, the use of a generalized sigmoidal expression gives a reliable and systematic quantification of the chemical interface. It sheds light on basic aspects of the early stages of heteroepitaxial growth, and permits to find a correlation between the profile and the interface properties in morphologically perfect epitaxial layers [8], which have been grown in the thermodynam...

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Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

Luna

Guzmán²,

Trampert³

et al. 2012

Phys. Rev. Lett.

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“…(2) based on an autocatalytic reaction model. 31 The values of τ0 and θ0 obtained by the fitting are 11000 s and 0.046 ML, respectively. 31 and a first order reaction model for Langmuir-type adsorption at 549 .…”

Section: Simentioning

confidence: 95%

Oxidation Mechanism of Silicon Surface. Growth Kinetics of Very Thin Oxide Layers on Si(001) Surface Monitored in Real-time by Auger Electron Spectroscopy Combined with Reflection High Energy Electron Diffraction.

Takakuwa¹

2002

Journal of The Surface Science Society of Japan

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This paper reviewed the recent study on the growth kinetics of very thin oxide layers on the Si(001) surface performed by a real-time monitoring method of Auger electron spectroscopy combined with reflection high energy electron diffraction (RHEED-AES). The RHEED-AES method enabled us to measure simultaneously the oxide coverage and etching rate during Si thermal oxidation. The time evolution of O KLL Auger electron intensity is applicable for discriminating definitely three kinds of oxidation schemes appearing at the initial stage: Langmuir-type adsorption, twodimensional (2D) oxide island growth and active oxidation. In the Langmuir-type adsorption, the time evolution of RHEED intensity ratio between the half-order spots of (1 2, 0) and (0, 1 2) I 1 2 0 I 0 1 2 suggested emission of Si atoms from the oxidized area, which was interpreted in terms of the interfacial strain due to volume expansion resulting from oxidation. In the 2D oxide island growth and active oxidation, the I 1 2 0 I 0 1 2 showed a periodic oscillatory behavior, the period of which was independent of temperature, oxide coverage and oxidation scheme, but changed in proportion to O2 pressure. This means that all of the adsorbed oxygen atoms are associated with etching of the surface in the 2D oxide island growth as well as in the active oxidation. Based on the experimental results, a surface reaction model of 2D oxide island growth was proposed, in which (1) repeated collisions between desorption precursors SiO migrating on the surface lead to nucleation and 2D growth of oxide islands, (2) etching of the surface originates from oxide growth as well as SiO desorption, (3) the resultant oxide layers are enriched with Si atoms, and (4) the interfacial strain of oxide islands is rather small in comparison to that for Langmuir-type adsorption. Using the Si atom emission due to the interfacial strain as a key concept, the progress of oxidation at the interface following the Langmuir-type oxidation and 2D oxide island growth and furthermore the decomposition kinetics of very thin oxide layers can be interpreted comprehensively.

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“…Since carbon atoms are etched out only when atoms or molecules attach themselves to the carbon atoms in SWNTs, the probability of the etching reaction can be simplified in terms of an adsorption reaction. Adopting the Langmuir's adsorption isotherm as the adsorption reaction (Suemitsu et al 1999), E(t g ) results in the following equation:…”

Section: Growth Mechanism and Kinetics Of Swnts In Pecvdmentioning

confidence: 99%

Nanocarbon materials fabricated using plasmas

Hatakeyama

2017

Rev. Mod. Plasma Phys.

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Since the discovery of fullerenes more than three decades ago, new kinds of nanoscale materials of carbon allotropes called ''nanocarbons'' have so far been discovered or synthesized at successive intervals as cases such as carbon nanotubes, carbon nanohorns, graphene, carbon nanowalls, and a carbon nanobelt, while nanodiamonds were actually discovered before then. Their attractively excellent mechanical, physical, and chemical properties have driven researchers to continuously create one of the hottest frontiers in materials science and technology. While plasma states have often been involved in their discovery, on the other hand, plasma-based approaches to this exciting field originally hold promising and enormous potentials for advancing and expanding industrial/biomedical applications of nanocarbons of great diversity. This article provides an extensive overview on plasma-fabricated nanocarbon materials, where the term ''fabrication'' is defined as synthesis, functionalization, and assembly of devices to cover a wide range of issues associated with the step-by-step plasma processes. Specific attention has been paid to the comparative examination between plasma-based and non-plasma methods for fabricating the nanocarobons with an emphasis on the advantages of plasma processing, such as low-temperature/large-scale fabrication and diversitycarrying structure controllability. The review ends with current challenges and prospects including a ripple effect of the nanocarbon studies on the development of related novel nanomaterials such as transition metal dichalcogenides. It contains not only the latest progress in the field for cutting-edge scientists and engineers, but also the introductory guidance to non-specialists such as lower-class graduate students.& Rikizo Hatakeyama

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Initial Oxidation of Si(100)-(2×1)as an Autocatalytic Reaction

Cited by 66 publications

References 13 publications

Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

Oxidation Mechanism of Silicon Surface. Growth Kinetics of Very Thin Oxide Layers on Si(001) Surface Monitored in Real-time by Auger Electron Spectroscopy Combined with Reflection High Energy Electron Diffraction.

Nanocarbon materials fabricated using plasmas

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