Mechanism and kinetics of the diffusion of gold in silicon

Gösele, U.; Frank, W.; Seeger, A.

doi:10.1007/bf00903217

Cited by 369 publications

(154 citation statements)

References 20 publications

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“…The variation in D 0 is ignored, and Q D contains contributions both from the point defect formation energy and the migration energy. The large number of impurity species we examine diffuse by a variety of mechanisms, 44,45 some of which change with temperature and some of which are unknown at the melting point. Hence 53 Au and Zn, 54 Co, 55 Cr, 56 Cu, 57 Fe, 58 Pt, 59 S, 60 Se, 61 Sn, 47 and Te.…”

Section: Discussionmentioning

confidence: 99%

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Recht¹,

Smith²,

Charnvanichborikarn³

et al. 2013

Journal of Applied Physics

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We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si supersaturated with Au and Zn are formed below the regions of cellular breakdown.

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Section: Discussionmentioning

confidence: 99%

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Recht¹,

Smith²,

Charnvanichborikarn³

et al. 2013

Journal of Applied Physics

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show abstract

“…(11) is a form of Fick's second law and yields an analytical solution, D i eff can be substituted into Eqs. (13) and (14). The standard solutions to Fick's second law are significant comparison tools utilized in the present paper as they are widely used to characterize experimental diffusion profiles.…”

Section: B Interstitial-limited Dissociative Diffusionmentioning

confidence: 99%

“…For vacancy-limited dissociative diffusion using a constant or limited source of impurity atoms, D V eff is substituted into Eqs. (13) or (14) respectively.…”

Section: Vacancy-limited Dissociative Diffusionmentioning

confidence: 99%

“…The diffusion-reaction form of the Fick's second law has been successfully applied to impurity diffusion in elemental semiconductors -Si:(Au and Zn), Ge:(Co, Cu, Ag, and Au). [11][12][13][14][15][16][17] Before discussing the simulation results, two pertinent analytical solutions are reviewed. 11…”

Section: A General Formulationmentioning

confidence: 99%

“…Diffusion mechanisms are intimately related to the concentrations of intrinsic and extrinsic point defects and their diffusion coefficients. [11][12][13][14][15][16][17] This paper concerns the dissociative diffusion mechanism (alternatively known as the FrankTurnbull mechanism) -where an impurity atom rapidly travels through interstitial sites before reacting with a vacancy -in vacancy-rich materials. 17 Two cases are studied where 1) the impurity interstitial diffusion is sufficiently rapid that vacancies are practically immobile, and 2) impurity interstitial diffusion becomes exceedingly fast that the concentration of impurity atoms in interstitial sites are maintained at the equilibrium value everywhere at all times, leading to the case where vacancy diffusion is the slowest process.…”

Section: Introductionmentioning

confidence: 99%

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Dissociative diffusion mechanism in vacancy-rich materials according to mass action kinetics

et al. 2016

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Two sets of diffusion-reaction numerical simulations using a finite difference method (FDM) were conducted to investigate fast impurity diffusion via interstitial sites in vacancy-rich materials such as Cu(In,Ga)Se2 (CIGS) and Cu2ZnSn(S, Se)4 (CZTSSe or CZTS) via the dissociative diffusion mechanism where the interstitial diffuser ultimately reacts with a vacancy to produce a substitutional. The first set of simulations extends the standard interstitial-limited dissociative diffusion theory to vacancy-rich material conditions where vacancies are annihilated in large amounts, introducing non-equilibrium vacancy concentration profiles. The second simulation set explores the vacancy-limited dissociative diffusion where impurity incorporation increases the equilibrium vacancy concentration. In addition to diffusion profiles of varying concentrations and shapes that were obtained in all simulations, some of the profiles can be fitted with the constant- and limited-source solutions of Fick’s second law despite the non-equilibrium condition induced by the interstitial-vacancy reaction. The first set of simulations reveals that the dissociative diffusion coefficient in vacancy-rich materials is inversely proportional to the initial vacancy concentration. In the second set of numerical simulations, impurity-induced changes in the vacancy concentration lead to distinctive diffusion profile shapes. The simulation results are also compared with published data of impurity diffusion in CIGS. According to the characteristic properties of diffusion profiles from the two set of simulations, experimental detection of the dissociative diffusion mechanism in vacancy-rich materials may be possible.

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Boron Diffusion in TaSi2 Thin Films

Marmelstein

Sinder

1998

phys. stat. sol. (a)

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Mechanism and kinetics of the diffusion of gold in silicon

Cited by 369 publications

References 20 publications

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Dissociative diffusion mechanism in vacancy-rich materials according to mass action kinetics

Boron Diffusion in TaSi2 Thin Films

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