Mechanism and Application of Capacitive-Coupled Memristive Behavior Based on a Biomaterial Developed Memristive Device

Abstract

The memory elements are an indispensable part for many electronic equipment and integrated circuit applications. Nonvolatile resistance random access memory (RRAM) based on the memristive effect is considered to be a promising technology in developing memory devices with low cost and high performance. In this work, to meet the development requirements of green and sustainable electronic devices, a functional electronic device is designed and manufactured by using the earth-abundant resources of wheat flour (WF) as the main component of the dielectric layer. The as-prepared bioelectronic device shows a significant capacitive-coupled memristive effect, which has further been studied by changing the mass mixing ratio of WF and polyvinylidene fluoride (PVDF) under different test temperatures. Ultimately, the working mechanism of the bioelectronic device is explained by a conductive filaments model based on a redox reaction. Therefore, this work not only designs and fabricates a bioelectronic device with the capacitive-coupled memristive effect, but also proposes an artificial implantable application for the development of multifunctional bioelectronic devices.

Memristor-based neural networks: a bridge from device to artificial intelligence

“…42 It also plays an increasingly important role in the emerging fields of medical health and robotics. [43][44][45] With continuous performance improvement, neural networks are increasingly deployed in some practical industrial applications, including manufacturing, asset management, mobile phone voice assistance, autonomous driving, and so on. Therefore, using memristors to simulate synapses is considered one of the key steps to building artificial neural networks.…”

Design and synthesis of a solution-processed redox-active bis(formazanate) zinc complex for resistive switching applications

“…Yield: 528 mg (45%). 1 H NMR (500 MHz, CDCl 3 ): δ 11.85 (s, 1H), 7.49 (t, J = 7.8 Hz, 4H), 7.37 (t, J = 7.8 Hz, 6H), 3.22 (s, 6H), 2.59 (s, 6H) ppm. 13 ).…”

“…The world is undergoing rapid development with advanced science and technology leading to closer communication among people, a greater exchange of information, and more conveniences than ever before. 1 Therefore, with the advent of the technological revolution, designing memory devices with minimal power consumption, good scalability, low cost, faster switching speeds, and simple structural design is in high demand. 2,3 In light of the fact that the advances in conventional memory devices are almost limited due to scaling and design limitations, and are unable to cope with the everincreasing demands of information explosion, resistance switching random access memory (RRAM) has progressively gained both industrial and fundamental attention due to the structural simplicity and adaptability to new active materials.…”

Memristors with Biomaterials for Biorealistic Neuromorphic Applications

“…In recent years, driven by the demand for novel green and smart applications, these natural plants have also been proposed as active building blocks for biomemristors (Figure 3d). [63,65,[91][92][93]97,[97][98][99][100] A detailed summary of basic RS parameters and working mechanisms from some representative works on biomamristors is provided in Table 1. Though outstanding performances have been reported in some biomemristor devices such as fast switching speed, high switching uniformity, and low power consumption, it is still a challenge to combine all the superior characteristics in a single device.…”

“…In recent years, driven by the demand for novel green and smart applications, these natural plants have also been proposed as active building blocks for biomemristors (Figure 3d). [ 63,65,91–93,97,97–100 ]…”