formulations that can maximize surface area accessibility and ion transport within electrodes while minimizing space and environmental impact. Consequently, Additive Manufacturing (AM) technologies, which are capable of printing 3D objects and complex structures, offer unique possibilities to bring novel electrode materials into highperformance EES devices. Among the AM technologies, continuous extrusion-based 3D printing (also called direct ink writing or robocasting) is a versatile and costeffective processing route where the formulation and properties of colloidal inks directly control the printability and architecture of printed parts. It further offers the ability to integrate functional materials of different surface chemistry and dimensionality into EES devices [1] such as Li-ion batteries, [2][3][4] micro-supercapacitors (MSCs), [5,6] and wearable electronics. [7,8] Recently, 2D transition metal carbides, called MXenes (M n+1 X n T x , with M representing an early transition metal, X representing C and/or N and, and T x representing the terminal functional groups), [9,10] have shown huge potential as electrode materials for supercapacitors. [11,12] Their combination of metallic conductivity, high density (3.8 ± 0.3 g cm −3 ), and redox active, negatively charged surfaces can lead to superior charge storage and transfer capabilities when compared to other 2D materials. Their surface functional groups (O, OH, and F) further render them hydrophilic allowing them to be easily dispersed into aqueous suspensions and inks for processing electrodes using different approaches such as vacuum filtration, [10,13] spin coating, [14,15] screen printing, [16,17] stamping, [18] and spraying. [19][20][21] While these approaches show the potential of MXene for water-based processing of EES devices, limitations remain with respect to architectural control, scalability, or cost-effectiveness that could be addressed by employing 3D printing technologies. Although MXene aqueous inks have been recently employed in commercial pens for direct writing functional films, [22] the development of 3D printable MXene inks and their integration into customized 3D device architectures is still unexplored. In order to realize this challenge, these materials need to be integrated into inks with very specific rheological properties that allow smooth flow through narrow nozzles while still enabling the extruded filaments to retain their shape even after multiple layers are Additive manufacturing (AM) technologies appear as a paradigm for scalable manufacture of electrochemical energy storage (EES) devices, where complex 3D architectures are typically required but are hard to achieve using conventional techniques. The combination of these technologies and innovative material formulations that maximize surface area accessibility and ion transport within electrodes while minimizing space are of growing interest. Herein, aqueous inks composed of atomically thin (1-3 nm) 2D Ti 3 C 2 T x with large lateral size of about 8 µm possessing ideal vis...

Highlights d REC114 directly interacts with ANKRD31, a novel factor required for normal fertility d ANKRD31 influences the distribution of double-strand breaks genome-wide d ANKRD31 is essential for the recombination between X and Y chromosomes d A crystal structure reveals a PH domain in REC114 and its contacts with ANKRD31

above advantage. [9,10] Resistive switching (RS) memories are highly promising candidates for next-generation nonvolatile memories owing to their high storage density, fast switching speed, and low power consumption. [11][12][13][14][15] Recently, some biomaterials have also been explored as an attractive building blocks for RS memories, such as pectin, [16] protein, [17] and chitosan, [18] etc. Among these materials, pectin holds the advantages of good solubility and fast metal ions transport. 1) For pectin, the ionization of carboxylic groups can promote the formation of hydrogen bonds; water molecules can easily penetrate into the pectin molecules which could facilitate the fast dissolution of pectin. [19,20] 2) Pectin includes functional groups such as COC and COH, and metal ions can migrate by interacting with these functional groups. [21,22] Hence, pectin can act as an ionic conductor enabling fast Ag ions migration, which could be desirable for developing RS memory. Recently, Sun et al. [16] have developed a memory device using pectin with reproductive RS characteristics. However, the transient behaviors of the memory still need study. In another aspect, there always exists particular research attention to develop flexible and multilevel memory devices to meet the increasing demands for high-density information storage in flexible electronic systems. Although the multilevel RS has been observed in many oxide systems, there are only few literatures reporting multilevel RS with natural biomaterials. [23] In this work, we present for the first time a flexible and multilevel RS memory with pectin extracted from natural orange peel. The devices exhibit excellent RS characteristics and the related mechanism is investigated by conducting atomic force microscopy (C-AFM) and temperature-dependent resistance measurement. In addition to their significant performance, such devices can be dissolved in deionized (DI) water rapidly accompanied by the failure of the RS properties. www.advancedsciencenews.com

ER stress Proteasome Degraded RAD51 Ionizing radiation Accumulation of DNA damage & cell death

Organic-inorganic hybrid perovskite memristors with high resistiveswitching (RS) reliability and low power consumption are crucial for high-density storage and high-efficiency neuromorphic computing. However, the current overshoot in the electroforming process generally induces overgrowth of conductive filaments (CFs) and degrades the RS performance. Here, a simple photo-assisted electroforming (PAE) method to suppress the current overshoot, in which the visible light irradiation is introduced into the initial electroforming process, is proposed for the first time. As a result, a reliable memristor with reduced RS fluctuation and enhanced cycling endurance is obtained, and also, the low operating current of 0.06 mA and low powerconsumption of 0.12 mW are achieved, which are about one order of magnitude lower than those of most reported hybrid perovskite-based memristors. Further experimental evidence indicates that light irradiation plays dual roles: 1) the lightinduced lowering of iodide migration barrier leads to a significant reduction of overshoot current and forming voltage; 2) the enhanced local photoconductivity of the perovskite film shares the overshoot current through the CFs. Both factors limit the total quantity of vacancy defects generated in the electroforming process, thus preventing undesirable overgrowth of the CFs. The present PAE strategy has promise for developing high-performance memristors.

A new operating scheme for voltage-polarity-controlled multilevel memory based on Ag/MoS2/Au flexible structure with reversible alternation between bipolar and unipolar resistive switching modes was demonstrated.

BackgroundSNPs are informative to estimate genomic breed composition (GBC) of individual animals, but selected SNPs for this purpose were not made available in the commercial bovine SNP chips prior to the present study. The primary objective of the present study was to select five common SNP panels for estimating GBC of individual animals initially involving 10 cattle breeds (two dairy breeds and eight beef breeds). The performance of the five common SNP panels was evaluated based on admixture model and linear regression model, respectively. Finally, the downstream implication of GBC on genomic prediction accuracies was investigated and discussed in a Santa Gertrudis cattle population.ResultsThere were 15,708 common SNPs across five currently-available commercial bovine SNP chips. From this set, four subsets (1,000, 3,000, 5,000, and 10,000 SNPs) were selected by maximizing average Euclidean distance (AED) of SNP allelic frequencies among the ten cattle breeds. For 198 animals presented as Akaushi, estimated GBC of the Akaushi breed (GBCA) based on the admixture model agreed very well among the five SNP panels, identifying 166 animals with GBCA = 1. Using the same SNP panels, the linear regression approach reported fewer animals with GBCA = 1. Nevertheless, estimated GBCA using both models were highly correlated (r = 0.953 to 0.992). In the genomic prediction of a Santa Gertrudis population (and crosses), the results showed that the predictability of molecular breeding values using SNP effects obtained from 1,225 animals with no less than 0.90 GBC of Santa Gertrudis (GBCSG) decreased on crossbred animals with lower GBCSG.ConclusionsOf the two statistical models used to compute GBC, the admixture model gave more consistent results among the five selected SNP panels than the linear regression model. The availability of these common SNP panels facilitates identification and estimation of breed compositions using currently-available bovine SNP chips. In view of utility, the 1 K panel is the most cost effective and it is convenient to be included as add-on content in future development of bovine SNP chips, whereas the 10 K and 16 K SNP panels can be more resourceful if used independently for imputation to intermediate or high-density genotypes.Electronic supplementary materialThe online version of this article (10.1186/s12863-018-0654-3) contains supplementary material, which is available to authorized users.

Hybrid organic−inorganic perovskite, CH 3 NH 3 PbI 3 (MAPbI 3 ), has attracted great attention as promising building blocks for resistive switching memory. However, the reproductive switching uniformity and long-term environmental stability are always critical issues for practical application. Herein, by insertion of a nanoscale AgInSbTe (AIST) layer between the Ag electrode and MAPbI 3 electrolyte layer (Ag/AIST/MAPbI 3 /FTO), the switching uniformity and environmental stability of the memory cell can be greatly improved. The suppression of excess Ag ions injection and the protection of MAPbI 3 from air exposure with the help of the AIST layer are ascribed to be responsible for the above-mentioned characteristics, respectively. Moreover, controllable tristate switching in the reset process provided the capability of multilevel storage of the memory cells, and the related mechanism has been identified as the control of nanoscale conductive filaments rupture in sequence from the AIST to MAPbI 3 layer. The present work would offer an effective way to develop high uniform and environmental stable MAPbI 3 -based high density memory systems.