Insertion of Nanoscale AgInSbTe Layer between the Ag Electrode and the CH₃NH₃PbI₃ Electrolyte Layer Enabling Enhanced Multilevel Memory

Abstract

Hybrid organic−inorganic perovskite, CH 3 NH 3 PbI 3 (MAPbI 3 ), has attracted great attention as promising building blocks for resistive switching memory. However, the reproductive switching uniformity and long-term environmental stability are always critical issues for practical application. Herein, by insertion of a nanoscale AgInSbTe (AIST) layer between the Ag electrode and MAPbI 3 electrolyte layer (Ag/AIST/MAPbI 3 /FTO), the switching uniformity and environmental stability of the memory cell can be greatly improved. The suppression of excess Ag ions injection and the protection of MAPbI 3 from air exposure with the help of the AIST layer are ascribed to be responsible for the above-mentioned characteristics, respectively. Moreover, controllable tristate switching in the reset process provided the capability of multilevel storage of the memory cells, and the related mechanism has been identified as the control of nanoscale conductive filaments rupture in sequence from the AIST to MAPbI 3 layer. The present work would offer an effective way to develop high uniform and environmental stable MAPbI 3 -based high density memory systems.

Memristors with organic‐inorganic halide perovskites

“…The temperature‐dependent LRS resistance measurement of a Ag/AgInSbTe/MAPbI 3 /fluorine‐doped tin oxide (FTO) memristor showed a typical metallic feature. The measured temperature coefficient (3.3 × 10 −3 K −1 ) is similar with that of pure metal Ag (3.8 × 10 −3 K −1 ) . Given the fact that the temperature coefficients of all other elements in MAPbI 3 are different from the value, the formation of Ag CFs is believed to be responsible for the RS.…”

“…Recently, multilevel storage in a single memristor has attracted great interests to enhance the storage density without affecting scalability . A thin fast ionic conductors AgInSbTe (AIST) layer was introduced into an Ag/MAPbI 3 /FTO structure as an Ag reservoir and protecting layer (Figure A) . The memristor showed tristate RS in the RESET process, providing multilevel memory capability (Figure B).…”

“…C, Multilevel resistance states under reproductive RS measurement. D, HRS/LRS of the Ag/AIST/MAPbI 3 /FTO memristor during consecutive RS measurement under air exposure…”

“…The measured temperature coefficient (3.3 × 10 −3 K −1 ) is similar with that of pure metal Ag (3.8 × 10 −3 K −1 ). 97 Given the fact that the temperature coefficients of all other elements in MAPbI 3 are different from the value, the formation of Ag CFs is believed to be responsible for the RS. Similar conclusion has also been reported in Ag/MAPbI 3 − x Cl x /FTO memristor.…”

“…[155][156][157] A thin fast ionic conductors 158 AgInSbTe (AIST) layer was introduced into an Ag/MAPbI 3 / FTO structure as an Ag reservoir and protecting layer ( Figure 24A). 97 The memristor showed tristate RS in the RESET process, providing multilevel memory capability ( Figure 24B). The mechanism was identified as the CFs rupture in sequence from the AIST to MAPbI 3 layers.…”