Mechanical Stress in SiNx Films Grown by High Density Plasma Enhanced Chemical Vapor Deposition

Kovalchuk, N. S.; Demidovich, S. A.; Власукова, Л. А.; Пархоменко, И. Н.; Komarov, F. F.

doi:10.1134/s0020168522090072

Inorg Mater

2022

DOI: 10.1134/s0020168522090072

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Mechanical Stress in SiNx Films Grown by High Density Plasma Enhanced Chemical Vapor Deposition

N. S. Kovalchuk

S. A. Demidovich

Л. А. Власукова

et al.

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2024

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Deposition of SiNx Films with Controlled Residual Stress from SiH4-NH3-He Gaseous Mixture in Inductively Coupled Plasma

Koval’chuk,

Demidovich,

Vlasukova

et al. 2024

Doklady Belorusskogo gosudarstvennogo universiteta informatiki

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We have studied residual mechanical stresses of SiNx films deposited on silicon substrates from a SiH4-NH3-He gaseous mixture in an inductively coupled plasma reactor at a deposition temperature of 150 °C. By varying the flow rate ratio of the reacting gases, the power of the plasma source and the pressure in the reaction chamber, it is possible to obtain SiNx films with tensile or compressive residual stresses. The stress drift was estimated within four weeks after film deposition. It has been shown that for nitride films with residual stresses initially close to zero, an increase in the level of compressive stresses to (–300) MPa is observed during storage.

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Deposition of SiNx Films with Controlled Residual Stress from SiH4-NH3-He Gaseous Mixture in Inductively Coupled Plasma

Koval’chuk,

Demidovich,

Vlasukova

et al. 2024

Doklady Belorusskogo gosudarstvennogo universiteta informatiki

Self Cite

View full text Add to dashboard Cite

show abstract

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Mechanical Stress in SiNx Films Grown by High Density Plasma Enhanced Chemical Vapor Deposition

Cited by 1 publication

References 10 publications

Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma

Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma

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