Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma
N. S. Koval’chuk,
S. A. Demidovich,
L. A. Vlasukova
et al.
Abstract:We have studied residual mechanical stresses of SiNx films deposited on silicon substrates from a SiH4-NH3-He gaseous mixture in an inductively coupled plasma reactor at a deposition temperature of 150 °C. By varying the flow rate ratio of the reacting gases, the power of the plasma source and the pressure in the reaction chamber, it is possible to obtain SiNx films with tensile or compressive residual stresses. The stress drift was estimated within four weeks after film deposition. It has been shown that for … Show more
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