Mechanical stress at the (111) Si surface covered by SiO2 and AlSiO2 layers

Jacobs, E.P.; Dorda, G.

doi:10.1016/0039-6028(78)90514-9

Cited by 19 publications

(5 citation statements)

References 7 publications

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“…The actual slight enhancement of oxidation induced by B hyperdoping should be associated with the tensile stress in B‐hyperdoped Si NCs. It is known that the oxidation of a Si NC leads to compressive stress at the interface between Si and silicon oxide . The compressive stress that develops during oxidation suppresses the oxidation .…”

Section: Difference In the Oxidation Of Hyperdoped Si Ncsmentioning

confidence: 99%

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Zhou

et al. 2014

Part. Part. Syst. Charact.

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Hyperdoping silicon nanocrystals (Si NCs) to a concentration exceeding the solubility limit of a dopant may enable their novel applications. Here, the successful hyperdoping of Si NCs with boron (B) and phosphorus (P) is demonstrated, which are the most important dopants for Si. Despite the hyperdoping, the diamond structure of Si NCs is hardly modified. There are both electrically active B and P in hyperdoped Si NCs. It is proposed that the hyperdoping is made possible mainly by the kinetics in the nonthermal plasma synthesis of Si NCs. Collision between Si NCs and B or P atoms and the binding energy of B or P at the NC surface are critical to the understanding on the differences in the doping efficiency and dopant distribution between B and P. B‐hyperdoping‐induced tensile stress needs to be taken into account in the investigation on the doping and oxidation of Si NCs.

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Section: Difference In the Oxidation Of Hyperdoped Si Ncsmentioning

confidence: 99%

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Zhou

et al. 2014

Part. Part. Syst. Charact.

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“…This is on the basis that we could derive the stress in the oxide from the stress in the silicon according to the equilibrium theory of fluid. 2,6,[29][30][31] In our two-dimensional simulation, only x(Si) and y(Si) are of interest and z(Si) ϭ0, thus only x(SiO 2 ) and y(SiO 2 ) are effective and z(SiO 2 ) ϭ0. Figure 8͑b͒ shows the simulated pressure of Si under tensile stress p Si versus positions on the silicon wafer.…”

Section: B Parabolic Rate Constantmentioning

confidence: 99%

“…[2][3][4][5] This kind of stress is compressive in the oxide and tensile in silicon. 6 Mechanical stress generally comes from the deposition of different kinds of films such as SiO 2 , poly-Si, Si 3 N 4 and metal electrodes. Structures of devices at sharp corners and at interconnect edges exhibit high stress as well.…”

Section: Introductionmentioning

confidence: 99%

Stress effect on the kinetics of silicon thermal oxidation

Yen

Hwu

2001

Journal of Applied Physics

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Oxidation of silicon wafers under external mechanical stress was studied in this work. From the oxide thickness profile measured by an automatic-scanning ellipsometer, it was found that the oxidation kinetics of silicon were significantly affected by mechanical stress. There are two distinct features of oxide thickness distribution corresponding to short and long times. By comparing the kinetic constants taken from experiments and the simulated stress distribution on the silicon wafer, we can possibly explain the two features of oxide thickness distribution: the initial rate constant is deformation dependent and the parabolic rate constant is stress dependent. The observed stress-dependent oxidation rates are important in the study of thin gate oxide reliability.

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“…[2][3][4][5] This kind of stress is compressive in the oxide and tensile in the silicon. 6 Mechanical stress generally comes from the deposition of different kinds of films such as SiO 2 , poly-Si, Si 3 N 4 , and metal electrodes. Structures of devices at sharp corner and interconnect edge exhibit high stress as well.…”

Section: ͓S0003-6951͑00͒02714-5͔mentioning

confidence: 99%

Enhancement of silicon oxidation rate due to tensile mechanical stress

Yen

Hwu

2000

Applied Physics Letters

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Oxidation of silicon wafers under external mechanical stress was studied in this work. From the oxide thickness profile measured by an automatic ellipsometer, it was found that the oxidation kinetics of silicon was affected by the mechanical stress. The tensile stress strongly enhances the oxidation rate of silicon. A concept was proposed to explain this phenomenon by using a well-known physical Si–SiO2 lattice model. The tensile stress in the silicon will enlarge the atom spacing of silicon and make the oxidation to be easier and faster. A simulated deformation of silicon substrate under tensile stress was also given to support this concept. This work is a direct evidence of the effect of mechanical stress on silicon oxidation.

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Mechanical stress at the (111) Si surface covered by SiO2 and AlSiO2 layers

Cited by 19 publications

References 7 publications

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Stress effect on the kinetics of silicon thermal oxidation

Enhancement of silicon oxidation rate due to tensile mechanical stress

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