Enhancement of silicon oxidation rate due to tensile mechanical stress

Yen, Jui-Hung; Hwu, Jenn–Gwo

doi:10.1063/1.126181

Cited by 44 publications

(45 citation statements)

References 20 publications

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“…5(a). The predicted curve agrees well with the experimental data provided by Tamura et al 31 Moreover, experimental results by Hwu et al 33,34 and Kao et al 7,29 also indicated that tensile loads accelerated the silicon oxidation process while compressive load retarded it. However, since the aim of their experiments was to investigate the non-uniform oxidation behavior of two-dimensional silicon specimens, it is hard to compare their results and the present prediction results directly.…”

Section: B Effect Of Constant Strain On Oxide Stress and Scale Thicksupporting

confidence: 81%

“…31,32 In the third category, the effect of external loads on the oxidation behavior of silicon was considered. Yen et al 33,34 placed two silicon wafers vertically at one side and put a small slice of quartz across the middle of the wafers to make them bend. However, although the bending deformation of the samples remained constant, the bending moment would diminish with time due to creep deformation.…”

Section: Introductionmentioning

confidence: 99%

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Coupled mechanical-oxidation modeling during silicon thermal oxidation process

Zhang

2015

AIP Advances

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This work provided an analytical model to solve the coupled mechanical-oxidation problem during the silicon thermal oxidation process. The silicon thermal oxidation behavior under two different mechanical load conditions, i.e., constant strain and uniaxial stress, were considered. The variations of oxide stress and scale thickness along with oxidation time were predicted. During modeling, all the effects of stress accumulation due to growth strain, stress relaxation due to viscous flow and the external load on the scale growth rate were taken into consideration. Results showed that the existence of external loads had an obvious influence on the oxide stress and scale thickness. Generally, tensile stress or strain accelerated the oxidant diffusion process. However, the reaction rate at the Si/SiO2 interface was retarded under uniaxial stress, which was not found in the case of constant strain load.

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Section: B Effect Of Constant Strain On Oxide Stress and Scale Thicksupporting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Coupled mechanical-oxidation modeling during silicon thermal oxidation process

Zhang

2015

AIP Advances

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“…At the same time, considerable effort has been invested in manipulating Si oxidation kinetics. For example, uni-and biaxial strains have been used in manufacturing Si-based devices, taking advantage of the fact that tensile stress increases the overall oxidation rate of thermally grown oxides (5).…”

mentioning

confidence: 99%

Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si

Gökce

Adles

Aspnes

et al. 2010

Proc. Natl. Acad. Sci. U.S.A.

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In-plane directional control of surface chemistry during interface formation can lead to new opportunities regarding device structures and applications. Control of this type requires techniques that can probe and hence provide feedback on the chemical reactivity of bonds not only in specific directions but also in real time. Here, we demonstrate both control and measurement of the oxidation of H-terminated (111) Si. Control is achieved by externally applying uniaxial strain, and measurement by second-harmonic generation (SHG) together with the anisotropic-bond model of nonlinear optics. In this system anisotropy results because bonds in the strain direction oxidize faster than those perpendicular to it, leading in addition to transient structural changes that can also be detected at the bond level by SHG.silicon | hyperpolarizability | ellipsometry | metrology | optical T he oxidation of silicon is one of the most technologically important chemical reactions. Because dangling bonds trap and/ or scatter carriers, well-organized bonding at Si∕SiO 2 interfaces is critical to device performance. Therefore, although Si oxidation has been studied for many years, the formation dynamics of Si∕SiO 2 interfaces continues to be of interest. The information provided to date regarding oxidation kinetics has been obtained primarily by standard spectroscopic and microscopic structuralanalysis techniques. For example, scanning tunneling microscopy and atomic force microscopy (AFM) studies have revealed the role of surface morphology during oxidation (1, 2). IR absorption experiments have probed the changes in vibrational modes during oxidation and have provided information about the chemical reactions involved in the process (3). Spectroscopic ellipsometry has provided data about growth rates (4). At the same time, considerable effort has been invested in manipulating Si oxidation kinetics. For example, uni-and biaxial strains have been used in manufacturing Si-based devices, taking advantage of the fact that tensile stress increases the overall oxidation rate of thermally grown oxides (5).The effect of strain on the morphology of clean vicinal and on-axis Si surfaces has been well studied by microscopic methods (6, 7). However, an atomic-level understanding of the specific effects of strain on surface chemistry is presently unknown. Here, we investigate oxidation of strained and unstrained H-terminated (111) Si in real time using second-harmonic generation (SHG), and we analyze these data with the anisotropic-bond model (ABM) of nonlinear optics. The bond-specific information that we obtain reveals two important aspects of the relevant chemical dynamics. First, strain changes the oxidation rates of Si─Si back bonds that are oriented in different directions, and second, the average back-bond directions themselves change as a result of this anisotropic oxidation. Fig. 1 provides an atomic-level view of the configuration, showing the bonding of the outermost bilayer of a (111) Si surface. Each outer-layer Si atom has one "up" bon...

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“…In cases of stressed oxidation, as with SiC fiber tows used to reinforce CMCs, the oxidation rate is significantly affected by the presence of the stress. For tensile stresses, the rate increases [125,199,200], whereas compressive stresses tend to decrease the rate. This is due, in part, to the effect of stress on crack growth.…”

Section: Oxidation In Air and Silicic Acid-saturated Steammentioning

confidence: 99%

“…Yen and Hwu [199,200] found that tensile stress strongly enhances the oxidation rate of silicon and that the parabolic rate constant was stress dependent. Hay noted that SiC oxidation is very similar to that of silicon [142].…”

Section: Oxidation In Air and Silicic Acid-saturated Steammentioning

confidence: 99%

Creep of Hi-Nicalon S Ceramic Fiber Tows at 800 deg C in Air and in Silicic Acid-Saturated Steam

Robertson¹

2015

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Enhancement of silicon oxidation rate due to tensile mechanical stress

Cited by 44 publications

References 20 publications

Coupled mechanical-oxidation modeling during silicon thermal oxidation process

Coupled mechanical-oxidation modeling during silicon thermal oxidation process

Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si

Creep of Hi-Nicalon S Ceramic Fiber Tows at 800 deg C in Air and in Silicic Acid-Saturated Steam

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