Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Zhou, Shu; Pi, Xiaodong; Ni, Zhenyi; Luan, Qingbin; Jiang, Yingying; Jin, Chuanhong; Nozaki, Tomohiro; Yang, Deren

doi:10.1002/ppsc.201400103

Cited by 72 publications

(103 citation statements)

References 47 publications

(55 reference statements)

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“…[ 6,[30][31][32] The atomic concentrations of B in B-hyperdoped Si NCs are ≈17%, 36%, and 60%, which are measured with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Transmission electron microscopy (TEM) and Raman …”

Section: Resultsmentioning

confidence: 99%

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Zhou

et al. 2016

Advanced Optical Materials

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and intermediate-band transition for bulk Si. [ 19,20 ] For Si NCs, hyperdoping is also emerging as an effective means to obtain novel properties. [21][22][23][24][25][26] For instance, localized surface plasmon resonance (LSPR) may occur to hyperdoped Si NCs. [21][22][23] And the energy of the LSPR can be conveniently tuned by the doping level.It is well known that the properties of intrinsic Si NCs are critically dependent on the NC size. [ 27,28 ] However, the size effect for hyperdoped Si NCs has been hardly explored. Previous work simply focused on the effect of the doping level. It has been recently predicted that the LSPR of hyperdoped Si NCs can be controlled by not only the doping level but also the NC size. [ 29 ] This highlights that the critical role played by the size effect may remain for Si NCs after hyperdoping. Therefore, it is of great interest to also investigate the size effect for hyperdoped Si NCs. Knowledge concerning the effect of the NC size on the dependence of the properties of hyperdoped Si NCs on the doping level should be invaluable for the synthesis of hyperdoped Si NCs with desired functionality.In this work, Si NCs hyperdoped with different B-doping levels are considered. The dependence of the physical properties of hyperdoped Si NCs on the NC size is examined. It is shown that the largest Si NCs undergo a stronger reduction of the average lattice spacing upon doping with respect to the smallest ones. While Raman, subbandgap optical absorption and the LSPR spectra are all modifi ed with increasing B concentrations in Si NCs, they also indicate that the largest Si NCs are less affected by disorder and charge carrier surface scattering. As a result, there exists a range of doping concentrations where the LSPR energy can be blueshifted as the NC size decreases. Results and DiscussionBoth B-hyperdoped and undoped Si NCs with different sizes have been synthesized by using SiH 4 -based nonthermal plasma. [ 6,[30][31][32] The atomic concentrations of B in B-hyperdoped Si NCs are ≈17%, 36%, and 60%, which are measured with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Transmission electron microscopy (TEM) and Raman

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Section: Resultsmentioning

confidence: 99%

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Zhou

et al. 2016

Advanced Optical Materials

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“…Given the fact that P may even enhance the oxidation of Si NCs, 9 considerable oxide should exist at the surface of our P-hyperdoped Si NCs. It appears that the viscous flow induced by the melting of surface oxide dominates the sintering of P-hyperdoped Si NCs at 950 • C. With the increase of the concentration of P thicker and more stoichiometric (x is closer to 2 in SiO x ) oxide is formed at the surface of P-hyperdoped Si NCs, 9 leading to more significant oxide-related viscous flow. Therefore, the sintering of P-hyperdoped Si NCs is more effective as the concentration of P increases.…”

Section: Methodsmentioning

confidence: 99%

“…For B-hyperdoped Si NCs, oxidation is limited, rather slightly depending on the concentration of B. 9 Therefore, the sintering of B-hyperdoped Si NCs is actually dominated by the viscous flow induced by the melting of smaller Si NCs in a Si-NC ensemble. With the increase of the hot-pressing temperature, this viscous flow becomes more significant, leading to the pronounced increase of the density of hot-pressed bulk Si (from ∼ 66% to 74% and then to 80% as the hot-pressing temperature changes from 950 • C to 1000 • C and then to 1050 • C).…”

Section: Methodsmentioning

confidence: 99%

“…9,14 Synthesis parameters were tuned to obtain hyperdoped Si NCs with similar sizes and varying atomic dopant concentrations. After synthesis hyperdoped Si NCs were transferred to an argon-filled glovebox (O 2 : < 1 ppm; H 2 O: < 1 ppm) without exposure to air.…”

Section: Methodsmentioning

confidence: 99%

“…It has been recently shown that Si nanocrystals (NCs) may be hyperdoped with doping levels exceeding the solubility limits of dopants in a nonthermal process. [9][10][11][12] This brings a new opportunity for the preparation of low-resistivity bulk Si. It is now possible that low-resistivity bulk Si is obtained by sintering hyperdoped Si NCs.…”

Section: Introductionmentioning

confidence: 99%

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Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals

Luan

Koura

et al. 2014

AIP Advances

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Technologically important low-resistivity bulk Si has been usually produced by the traditional Czochralski growth method. We now explore a novel method to obtain low-resistivity bulk Si by hot-pressing B- and P-hyperdoped Si nanocrystals (NCs). In this work bulk Si with the resistivity as low as ∼ 0.8 (40) mΩ•cm has been produced by hot pressing P (B)-hyperdoped Si NCs. The dopant type is found to make a difference for the sintering of Si NCs during the hot pressing. Bulk Si hot-pressed from P-hyperdoped Si NCs is more compact than that hot-pressed from B-hyperdoped Si NCs when the hot-pressing temperature is the same. This leads to the fact that P is more effectively activated to produce free carriers than B in the hot-pressed bulk Si. Compared with the dopant concentration, the hot-pressing temperature more significantly affects the structural and electrical properties of hot-pressed bulk Si. With the increase of the hot-pressing temperature the density of hot-pressed bulk Si increases. The highest carrier concentration (lowest resistivity) of bulk Si hot-pressed from B- or P-hyperdoped Si NCs is obtained at the highest hot-pressing temperature of 1050 °C. The mobility of carriers in the hot-pressed bulk Si is low (≤ ∼ 30 cm-2V-1s-1) mainly due to the scattering of carriers induced by structural defects such as pores.

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Synthesis and Properties of Plasmonic Boron‐Hyperdoped Silicon Nanoparticles

Rohani

Banerjee

Sharifi‐Asl

et al. 2019

Adv Funct Materials

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Electronic properties of silicon, the most important semiconductor material, are controlled through doping. The range of achievable properties can be extended by hyperdoping, i.e., doping to concentrations beyond the nominal equilibrium solubility of the dopant. Here, hyperdoping is achieved in a laser pyrolysis reactor capable of providing nonequilibrium conditions, where doping is governed by kinetics rather than thermodynamics. High resolution scanning transmission electron microscopy (TEM) with energy-dispersive X-ray spectroscopy shows that the boron atom distribution in the hyperdoped nanoparticles is relatively uniform. The hyperdoped nanoparticles demonstrate tunable localized surface plasmon resonance (LSPR) and are stable in air for periods of at least one year. The hyperdoped nanoparticles are also stable upon annealing at temperatures up to 600 °C. Furthermore, boron hyperdoping does not change the diamond cubic crystal structure of silicon, as demonstrated in detail by high flux synchrotron X-ray diffraction and pair distribution function (PDF) analysis, supported by high-resolution TEM analysis.

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Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Cited by 72 publications

References 47 publications

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals

Synthesis and Properties of Plasmonic Boron‐Hyperdoped Silicon Nanoparticles

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