Mechanical strain effects on resistive switching of flexible polymer thin films embedded with ZnO nanoparticles

Sui, Wen; Zhang, Chi; Xu, He-Yuan; Li, Jian‐Chang

doi:10.1088/2053-1591/aacd8a

Cited by 6 publications

(5 citation statements)

References 63 publications

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“…With a continuous voltage sweep, the slopes became larger than 2, indicating a space-charge-limitedcurrent (SCLC) conducting mechanism. 16 The LRS showed the ohmic conduction. Thus, the SCLC and ohmic conductions were dominant in the AP2DC and AP2RF devices in the HRS and LRS, respectively.…”

Section: Resultsmentioning

confidence: 96%

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Metal and Carbon Filaments in Biomemory Devices through Controlling the Al/Apple Pectin Interface

Chang

Jian

Chuang³

et al. 2020

ACS Appl. Electron. Mater.

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Interface control of the filament types and the resistive switching behavior of apple pectin (AP) memory devices were systematically investigated using different sputtering plasmas. Supported by the temperature dependence of resistance and line-scan profiles, it can be observed that the sharp interface between the direct current (DC) Al and AP layer of the DC Al/AP/ITO structure showed semiconducting behavior. In the case of the radio frequency (RF) Al/AP/ITO structure, the transition from the metallic to semiconducting behavior occurred at 333 K. The transformation of filament types was a direct consequence of Al diffusion from the RF Al electrode. The diffused Al atoms from the RF Al electrode contributed to the creation of metallic filamentary channels. Moreover, the metal Al effectively diffused through RF sputtering, leading to the formation of an interfacial oxide layer between the Al electrode and the AP thin film. The role of the interfacial layer in enabling stable resistive switching and high device performance in the Al/AP/ITO resistive memory device was revealed. The AP memory device demonstrated a promising ON/OFF ratio of over 107 with uniform electrical distribution and stable retention. Understanding the underlying switching mechanisms of AP memory devices may pave the way toward smart bioelectronics.

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Section: Resultsmentioning

confidence: 96%

“…As shown in Figure a, the current at the HRS linearly varied with the voltage in the low-voltage region and then quadratically increased. With a continuous voltage sweep, the slopes became larger than 2, indicating a space-charge-limited-current (SCLC) conducting mechanism . The LRS showed the ohmic conduction.…”

Section: Resultsmentioning

confidence: 99%

Metal and Carbon Filaments in Biomemory Devices through Controlling the Al/Apple Pectin Interface

Chang

Jian

Chuang³

et al. 2020

ACS Appl. Electron. Mater.

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“…The RESET process of the device is temperature independent as significant Joule heating in LRS during the RESET process enables the temperature immunity to the device. The significant Joule heating in LRS dominates over the effect of transferred strain in the AlN thin film [39,40]. Therefore, the rupture of metallic filament becomes independent from the temperature-induced strain, and does not influence the RESET voltage.…”

Section: Resultsmentioning

confidence: 99%

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Kumar

Kaur

2021

Nanotechnology

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This report explores the influence of temperature on resistive switching characteristics in the AlN/Ni-Mn-In magnetoelectric (ME) heterostructure-based resistive random access memory (ReRAM) device. The fabricated Cu/AlN/Ni-Mn-In/Si device exhibits a sharp transition from a high resistance state (HRS) to low resistance state (LRS) at a SET voltage. The rupture of the filament from its weakest point at a RESET voltage turn the device back to its HRS. The stable bipolar resistive switching behavior is described by the current-voltage (I-V ) characteristic. The HRS and LRS are explained by the trap-controlled space charge limited conduction mechanism and a well-known Ohmic conduction mechanism, respectively. The temperature-dependent resistance has been observed to further confirm the conduction mechanism in HRS and LRS. The current conduction in LRS is explained by an analytical model based on copper metallic filament formation via Cu + migration from the top to the bottom electrode. A significant change in the SET voltage has been observed with the decrease in temperature. This variation in the SET voltage is explained via strain-mediated coupling in interfacially connected AlN/Ni-Mn-In ME heterostructure. The fabricated device displays an appreciable OFF/ON ratio of the order ∼3×10 3 with good endurance and retention of ∼1000 cycles and ∼900 s, respectively. A slight variation (<40%) in SET and RESET voltages has been observed for total endurance cycles. This study demonstrates the importance of ME heterostructure for futuristic tuneable ReRAM applications.

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“…Flexibility is an extra degree of freedom, which can be provided by polymer-based organic RS devices [196,211,221,[223][224][225][226][227]. However, increasing the possible number of bends to a significantly large number (>10 6 ) with better stability and reproducibility is still a challenge.…”

Section: Polymers and Carbon-based Materials And Their Compositesmentioning

confidence: 99%

“…However, increasing the possible number of bends to a significantly large number (>10 6 ) with better stability and reproducibility is still a challenge. Sui et al [196] studied interfacial effects on the RS behavior of polymer-ZnO nanoparticle nanocomposites and demonstrated that under severe bending stress interfacial traps within the nanocomposites fail, which changes the conduction mechanism to ohmic from SCLC and therefore limits the bending capability of such devices.…”

Section: Polymers and Carbon-based Materials And Their Compositesmentioning

confidence: 99%

Advances in resistive switching based memory devices

Munjal¹,

Khare²

2019

J. Phys. D: Appl. Phys.

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Among the emerging memories, resistive switching (RS) based resistive random-access memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal structures, low power consumption, long endurance and retention characteristics, low fabrication cost, ultrafast switching, and CMOS compatibility. In recent years, several oxides, chalcogenides, polymers and their composites have been explored for RS devices. Many of these studies show a high resistance ratio of the OFF and ON states with good RS characteristics. Some of these studies also show the realization of multifunctional RS devices such as the simultaneous switching of resistance and magnetic states. In order to scale up RS-based RRAMs, a detailed understanding of the occurrence of RS is very much desirable. In this review, we provide an overview of the current understanding, recent advances and future outlook of RS-based RRAM devices along with fundamental concepts of the different types of RS, and conventional as well as novel measurement techniques which are being used to characterize RS devices. Observations of RS in different materials are presented, and RS mechanisms, such as the valence change mechanism and electrochemical metallization memory, are discussed in detail. An overview of multifunctional RS devices and the main challenges faced in scaling up RS devices is also presented.

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Mechanical strain effects on resistive switching of flexible polymer thin films embedded with ZnO nanoparticles

Cited by 6 publications

References 63 publications

Metal and Carbon Filaments in Biomemory Devices through Controlling the Al/Apple Pectin Interface

Metal and Carbon Filaments in Biomemory Devices through Controlling the Al/Apple Pectin Interface

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Advances in resistive switching based memory devices

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