Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Abstract

This report explores the influence of temperature on resistive switching characteristics in the AlN/Ni-Mn-In magnetoelectric (ME) heterostructure-based resistive random access memory (ReRAM) device. The fabricated Cu/AlN/Ni-Mn-In/Si device exhibits a sharp transition from a high resistance state (HRS) to low resistance state (LRS) at a SET voltage. The rupture of the filament from its weakest point at a RESET voltage turn the device back to its HRS. The stable bipolar resistive switching behavior is described by the current-voltage (I-V ) characteristic. The HRS and LRS are explained by the trap-controlled space charge limited conduction mechanism and a well-known Ohmic conduction mechanism, respectively. The temperature-dependent resistance has been observed to further confirm the conduction mechanism in HRS and LRS. The current conduction in LRS is explained by an analytical model based on copper metallic filament formation via Cu + migration from the top to the bottom electrode. A significant change in the SET voltage has been observed with the decrease in temperature. This variation in the SET voltage is explained via strain-mediated coupling in interfacially connected AlN/Ni-Mn-In ME heterostructure. The fabricated device displays an appreciable OFF/ON ratio of the order ∼3×10 3 with good endurance and retention of ∼1000 cycles and ∼900 s, respectively. A slight variation (<40%) in SET and RESET voltages has been observed for total endurance cycles. This study demonstrates the importance of ME heterostructure for futuristic tuneable ReRAM applications.

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Interface Ion-Driven, Highly Stable Synaptic Memristor for Neuromorphic Applications

“…The spectrum corresponding to Cu ions shows the presence of these ions in the AlN layer (Figure e), thus confirming the positive voltage bias-induced diffusion of Cu ions from the Cu interfacial layer into the top and bottom AlN layers. Therefore, similar to other active electrodes (e.g., Ag and In), Cu, under the influence of a strong electric field, can form a conductive filament in an RRAM device. − …”

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“…The resistive random access memory (RRAM) could be a promising candidate for next-generation memory devices owing to its high switching speed, low power consumption, high-density integration, considerable endurance, and retention. − It comprises a simple metal–insulator–metal (MIM) structure and easy fabrication. , The ReRAM device shows an alteration in the resistance states from the low-resistance state (LRS) to the high-resistance state (HRS) with an applied external electric field . Two types of resistive switching can be observed in RRAM devices, namely, abrupt and gradual switching .…”

“…18,19 The ReRAM device shows an alteration in the resistance states from the low-resistance state (LRS) to the high-resistance state (HRS) with an applied external electric field. 20 Two types of resistive switching can be observed in RRAM devices, namely, abrupt and gradual switching. 21 In the former case, the sudden resistance change occurs at a particular threshold voltage, and the latter is independent of the threshold voltage.…”