Unravelling the magnetodielectric characteristics of strain-coupled PMN-PT/FSMA multiferroic heterojunction toward flexible MEMS applications

Abstract

Flexible microelectromechanical (MEMS) devices are poised to scaffold technological innovations in the fields of wearable sensors, implantable health monitoring systems and touchless human-machine interaction. Here, we report the magnetoelectric properties of cost-effective and room-temperature sensitive 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3/Ni50Mn35In15 (PMN-PT/FSMA) multiferroic heterostructure integrated on flexible stainless steel substrate via RF/DC magnetron sputtering technique. The growth of the pure perovskite phase of PMN-PT without any pyrochlore impurity is confirmed by the dominant (002) orientation of the tetragonal PMN-PT. The double logarithmic plot of current density with electric field validates an Ohmic conduction mechanism with low leakage current density of ~10-6 A/cm2. The anomaly observed in temperature-dependent dielectric and ferroelectric characteristics of the heterostructure overlap with the martensite transformation regime of the bottom Ni-Mn-In (FSMA) layer. The PMN-PT/Ni-Mn-In multiferroic heterostructure exhibits a significant magnetodielectric effect of ~3% at 500 Oe and can be used as an ultra-sensitive room-temperature magnetic field sensor. These results have been explained by an analytical model based on strain-mediated magnetoelectric coupling between interfacially coupled PMN-PT and Ni-Mn-In layers of the multiferroic heterostructure. Furthermore, the excellent retention of magnetodielectric response up to 200 bending cycles enhances its applicability towards flexible MEMS devices. Such PMN-PT based multiferroic heterostructures grown over the flexible substrate can be a potential candidate for piezo MEMS applications.

Enhanced Synaptic Characteristics under Applied Magnetic Field in V2O5/NiMnIn-Based Switching Device for Neuromorphic Computing

“…89-2482] . In addition, the XRD peaks (311) and (111) at 2θ ∼50.35 and ∼25.45°, respectively, are related to the NiMnIn bottom electrode. ,, The layer structure was confirmed by plotting the Raman spectra of the sputter-deposited V 2 O 5 active switching layer (Figure c). The bonding vibration modes obtained at wave numbers 145, 284, 490, 690, and 994 cm –1 are in good concordance with previously published data.…”

“…Flexible metal foils are gaining significant attention over polyimides because of high-temperature usage. Stainless steel (SS) has been suggested as a flexible substrate material because of its high Young’s modulus, excellent thermal stability, and good conductivity. ,, …”

“…Stainless steel (SS) has been suggested as a flexible substrate material because of its high Young's modulus, excellent thermal stability, and good conductivity. 16,30,46 In this work, the RRAM-based neuromorphic device was fabricated using 2D V 2 O 5 , as an active switching layer, and NiMnIn was introduced as the functional bottom electrode. The present device shows a gradual SET and RESET process.…”

Directly Sputtered Molybdenum Disulfide Nanoworms Decorated with Binder-less VN and W2N Nanoarrays for Bendable Large-Scale Asymmetric Supercapacitor

“…The survey scan confirms the presence of various atomic species such as Mo, S, V, and N for the first spectrum and Mo, S, W, and N in other spectra of nanocomposite samples (Figure a). In both spectra, C-1s (284.98 eV) and O-1s regions appeared as a consequence of the infiltration of environmental impurities of carbon and oxygen onto the film surface, respectively. , Furthermore, the experimental data were fitted with commercially available software MultiPak 9.0 and Origin 2018 to deconvolute raw data into subpeaks. The obtained fitting envelopes for all regions are analogous to their experimental data with negligible error.…”

Magnetoelectric Functionality of Ni–Mn–In-Encapsulated AlN/Ni–Mn–In/Ni-Graded Heterostructure for Flexible Magnetic Field Sensor

“…In particular, thin film-based magnetoelectric heterostructures are more promising for the on-chip integration of magnetoelectric devices and microelectromechanical system (MEMS) fabrication. 17 coupling in artificial magnetoelectrics is defined as the crossproduct of the magnetostrictive and piezoelectric effects in the constituent ferromagnetic and piezoelectric phases, respectively, and is defined by the relation 21,22,24 where α, P , , and H denote the ME coupling coefficient, piezoelectric effect, strain transfer coefficient, and magnetostrictive susceptibility. The performance of magnetoelectric coupling-based devices is usually quantified by α, and it depends on the selection of functional magnetostrictive and piezoelectric materials, their volume fraction, and interfacial characteristics.…”