Mechanical properties of sol–gel derived lead zirconate titanate thin films by nanoindentation

Structural and nanomechanical properties of sol–gel prepared (K, Na)NbO3 thin films

“…a and a) and KNN/Pt/SiO 2 /Si (Figs. b and b) composite systems on normalized depth (h/t) fitted by Zhou–Prorok (Z–P) model and Huang–CHang (H–CH) model, respectively . In Fig.…”

“…In particular, it has been well established that, when the size is down to the nanoscale, the mechanical properties of materials, for example the hardness and Young's modulus, may be very different from that in the bulk form. The modulus of PZT film prepared using sol–gel and deposited by spin‐coating on Pt/Ti/SiO 2 /Si substrate ranged from 90 to 160 GPa and the hardness from 5 to 8 GPa . The hardness for the bulk PZT ceramics was 4.5 GPa .…”

Detection of residual stress in Ba(Mg1/3Ta2/3)O3 thin films by nanoindentation technique

“…Based on XRD and SEM, the grain size of BMT thin films increases with the increase in the annealing temperature. The decreasing number of grain boundaries by the increasing grain size leads to a hardening of the material [19,20]. The grain size effect on the Young's modulus of BMT thin films may be explained by the increase in the volume fraction of the grain boundary with grain size reduction [21].…”

Influence of buffer layer on structural, electrical and mechanical properties of PZT/NiTi thin film heterostructures

“…The higher deposition temperature for ferroelectric thin films is likely to be associated with the deterioration of the shape memory properties of underneath NiTi layer which further degrades the performance of the damping device [13]. Highly oriented PZT films with low crystallization temperature would significantly enhance the piezoelectric, dielectric, mechanical and damping properties of PZT films necessary for the successful vibration damping approach with improved performance and reliability [14][15][16]. Therefore, it is imperative to incorporate a suitable buffer layer as a template between PZT and NiTi, which can promote the growth of highly oriented PZT films at lower substrate temperatures.…”