Detection of residual stress in Ba(Mg1/3Ta2/3)O3 thin films by nanoindentation technique

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Lv, Chun; Qi, Yanyuan

doi:10.1016/j.ceramint.2015.05.123

Cited by 8 publications

(3 citation statements)

References 24 publications

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“…The total energy of the films decreased with the growth of grains and decrease in the grain boundary area, resulting in an increase in the grain size and variance of surface roughness. Others reported that the activation of atom diffusion after obtaining more thermal energy at higher temperature facilitated the repairing of the dislocated atomic occupancies and even promoted the coalescence of adjacent grains [42,[135][136][137]. In fact, a small amount of annealing could result in stress-free film, but excess annealing could cause distortion of the thin films [115].…”

Section: Effects Of Different Annealing Temperatures On the Surface R...mentioning

confidence: 99%

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Chen

Tian

Zhang

et al. 2017

J. Micromech. Microeng.

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Surface roughness seriously affects the electromagnetic performance of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switches. This review presents the effects of different film thickness values, substrate topologies, sputtering powers, gas pressures, gas ratios, substrate temperatures and annealing temperatures on the surface roughness of deposited thin films. At the same time, the mechanisms of the deposition parameters on the surface roughness are also analyzed. The effects of surface roughness on the electromagnetic performance of capacitive RF MEMS switches are then discussed in detail. Finally, two different methods for improving the surface roughness of deposited thin films are given.

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Section: Effects Of Different Annealing Temperatures On the Surface R...mentioning

confidence: 99%

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Chen

Tian

Zhang

et al. 2017

J. Micromech. Microeng.

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“…The BMT layer and PZT layer diffused each other to form an interface layer with a thickness of 8.6 nm, which is much thinner than the PZT-BMT interface. There were holes on the surface of the BMT layer [29], and the PZT precursor solution penetrated into the BMT layer to form a thick PZT-BMT interface during lamination. However, the PZT layer grew densely, and formed a BMT-PZT interface mainly in the form of diffusion.…”

Section: Structure and Morphology Analysismentioning

confidence: 99%

Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg1/3Ta2/3)O3/PbZr0.52Ti0.48O3 Thin Films

Wu,

Liu,

Zhou

et al. 2023

Materials

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Multilayer films can achieve advanced properties and a wide range of applications. The heterogeneous interface plays an important role in the performances of multilayer films. In this paper, the effects of the interface of Ba(Mg1/3Ta2/3)O3/PbZr0.52Ti0.48O3 (BMT/PZT) thin films on dielectric behavior and temperature stability are investigated. The heterogeneous interface structures are characterized by Auger electron spectroscopy (AES). The PZT-BMT interface is different from the BMT-PZT interface in thickness. For the PZT-BMT interface, the PZT thin films are diffused to the whole BMT layers, and the interface thickness is about 90 nm, while the BMT-PZT interface’s thickness is only about 8.6 nm. The presence of heterogeneous interfaces can improve the performances of BMT/PZT thin films and expand their applications. The dielectric constant of BBPP thin films is significantly lower than BPBP thin films, while the dielectric loss is exactly the opposite. The more interfaces there are, the greater the dielectric constant. The relationship between the electric-field-dependent dielectric constant curve and the P-E curve is established. The equivalent interface barrier of the diode is used to show that the dielectric peaks under the positive and negative voltage are different. Similarly, heterogeneous interfaces show a certain improvement in dielectric tunability and temperature stability.

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“…[3,[5][6][7] This measurement method is particularly dedicated and successfully applied for studying of mechanical properties of thin films. [8][9][10][11] For example, Kiran et al performed high-temperature nanoindentation on pure ion-implanted amorphous silicon. [5] They shown that unrelaxed a-Si deforms entirely via plastic flow, whereas a clear transition in the mode of deformation is observed in an annealed a-Si.…”

Section: Introductionmentioning

confidence: 99%

Size Effects of Hardness and Strain Rate Sensitivity in Amorphous Silicon Measured by Nanoindentation

Jarząbek

Milczarek

Nosewicz

et al. 2020

Metall Mater Trans A

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In this work, dynamic mechanical properties of amorphous silicon and scale effects were investigated by the means of nanoindentation. An amorphous silicon sample was prepared by plasma-enhanced chemical vapor deposition (PECVD). Next, two sets of the samples were investigated: as-deposited and annealed in 500°C for 1 hour. A three-sided pyramidal diamond Berkovich's indenter was used for the nanoindentation tests. In order to determine the strain rate sensitivity (SRS), indentations with different loading rates were performed: 0.1, 1, 10, 100 mN/min. Size effects were studied by application of maximum indentation loads in the range from 1 up to 5 mN (penetrating up to approximately one-third of the amorphous layer). The value of hardness was determined by the Oliver-Pharr method. An increase of hardness with decrease of the indentation depth was observed for both samples. Furthermore, the significant dependence of hardness on the strain rate has been reported. Finally, for the annealed samples at low strain rates a characteristic ''elbow'' during unloading was observed on the force-indentation depth curves. It could be attributed to the transformation of (b-Sn)-Si to the PI (pressure-induced) a-Si end phase.

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Detection of residual stress in Ba(Mg1/3Ta2/3)O3 thin films by nanoindentation technique

Cited by 8 publications

References 24 publications

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg1/3Ta2/3)O3/PbZr0.52Ti0.48O3 Thin Films

Size Effects of Hardness and Strain Rate Sensitivity in Amorphous Silicon Measured by Nanoindentation

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