Size Effects of Hardness and Strain Rate Sensitivity in Amorphous Silicon Measured by Nanoindentation

Abstract

In this work, dynamic mechanical properties of amorphous silicon and scale effects were investigated by the means of nanoindentation. An amorphous silicon sample was prepared by plasma-enhanced chemical vapor deposition (PECVD). Next, two sets of the samples were investigated: as-deposited and annealed in 500°C for 1 hour. A three-sided pyramidal diamond Berkovich's indenter was used for the nanoindentation tests. In order to determine the strain rate sensitivity (SRS), indentations with different loading rates were performed: 0.1, 1, 10, 100 mN/min. Size effects were studied by application of maximum indentation loads in the range from 1 up to 5 mN (penetrating up to approximately one-third of the amorphous layer). The value of hardness was determined by the Oliver-Pharr method. An increase of hardness with decrease of the indentation depth was observed for both samples. Furthermore, the significant dependence of hardness on the strain rate has been reported. Finally, for the annealed samples at low strain rates a characteristic ''elbow'' during unloading was observed on the force-indentation depth curves. It could be attributed to the transformation of (b-Sn)-Si to the PI (pressure-induced) a-Si end phase.

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