Mechanical Behavior of Czochralski-Silicon Crystals as Affected by Precipitation and Dissolution of Oxygen Atoms

Yonenaga, Ichiro; Sumino, Kôji

doi:10.1143/jjap.21.47

Cited by 56 publications

(19 citation statements)

References 28 publications

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“…As a method described above for suppressing dislocation in the Si wafer surface layer, it is known to utilize the fixing effect of oxygen [31][32][33][34][35]. It is known that the Si substrate of the CZ method with higher oxygen concentration suppresses the shear stress than the Si substrate of the FZ (Floating Zone) method with less oxygen in the Si substrate.…”

Section: A Hypothesis Of the Si Emissionmentioning

confidence: 99%

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Fukuda

Endoh

Ishikawa

et al. 2017

e-J. Surf. Sci. Nanotech.

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In past studies, the Si emission phenomenon is one of the issues for fabrication of 3D structure devices such as FinFETs and Vertical MOSFETs. In this paper, it is found that novel Si emission phenomena depending on the surface oxygen concentration of Si wafer occur, when Si pillars patterned less than 100 nm are oxidized. A wafer with high oxygen concentration which is over 1.0×1018 atoms/cm 3 can suppress Si emission from the Si pillar compared to the low oxygen concentration wafers which are less than 1.0×1017 atoms/cm 3 . The difference of oxygen concentration in the Si substrate is expected to largely depend on the behavior of oxygen atom in the Si wafer before and after oxidation. In case of an oxygen concentration ratio exceeding the solid solubility of Si, oxygen diffuses outward from the Si substrate after oxidation, whereas oxygen diffuses inward when the concentration is below the solid solubility. It was also found that the larger the degree of injection of oxygen into the Si substrate after oxidation, the larger the emission amount of Si from the Si pillar. Finally, we discuss the mechanism of above experimental Si emission phenomena in nanoscale Si pillar with previous first principle model of silicon oxidation process.

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Section: A Hypothesis Of the Si Emissionmentioning

confidence: 99%

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Fukuda

Endoh

Ishikawa

et al. 2017

e-J. Surf. Sci. Nanotech.

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show abstract

“…In general, during crystal growth, the ingots will be kept in chamber for a while after the solidification, which is similar to a certain heat treatment, resulting in the formation of asgrown oxygen precipitation [4]. Therefore, during device fabrication especially annealing at high temperature, these precipitates can seed for further oxygen precipitation, which is beneficial to internal gettering (IG) capability [5] and mechanical properties [6,7] for Cz Si wafers. Hence, the properties of as-grown oxygen precipitation are well-worth studying [8].…”

Section: Introductionmentioning

confidence: 99%

Germanium effect on as-grown oxygen precipitation in Czochralski silicon

Chen¹,

Yang²,

Li³

et al. 2006

Journal of Crystal Growth

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“…loops, punched out from such oxygen precipitates formed at high temperatures, decrease the upper yield stress, because the punched-out dislocations act as slip dislocation sources. 13,14 The interaction between dopants and point defects also affects oxygen precipitation. Heavily doped p-type wafers can much easier precipitate oxygen than heavily doped n-type silicon wafers.…”

Section: Upper Yield Stress Of Silicon Crystalsmentioning

confidence: 99%

Slip-free processing of 300 mm silicon batch wafers

Fischer

Richter

Kürner³

et al. 2000

Journal of Applied Physics

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Articles you may be interested inTheoretical calculation of the acoustic force on a patterned silicon wafer during megasonic cleaning Under gravitational and thermal constraints of integrated-circuit ͑IC͒ process technology, 300-mm-diam silicon wafers can deform via slip dislocation generation and propagation, degrading the electrical characteristics of the leading edge device. We present a force balance model to describe the strain relaxation in large wafer diameter, which includes heat transfer effects and the upper yield point of the silicon material. The material attributes, such as oxygen content and the state of oxygen aggregation, are taken into account. The theoretical approach allows the calculation of wafer mechanics and ramp rate profiles for an arbitrary high-temperature process. Plastic deformation of silicon wafers caused by thermal stresses at high temperatures can be controlled by process design. Deformation due to gravitational forces can be prevented through appropriate equipment design. The quantitative theory proposed here provides guidance for computer simulation to configure stable slip-free wafer process flow under mechanical and thermal loads. Applications include high speed simulation of ''what if?'' experiments, and initial simulations of large scale experimental sequences. The simulator developed can also be used by IC manufacturers to determine optimum wafer throughput and cycle times in front-end device processes.

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Mechanical Behavior of Czochralski-Silicon Crystals as Affected by Precipitation and Dissolution of Oxygen Atoms

Cited by 56 publications

References 28 publications

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Germanium effect on as-grown oxygen precipitation in Czochralski silicon

Slip-free processing of 300 mm silicon batch wafers

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