Mechanic properties modification of SiO2 thin films by femtosecond laser

Zhi, Xintao; Li, Xiao Peng; Yuan, Songmei; Wang, Dasen; Wang, Kehong

doi:10.1016/j.ijleo.2021.168404

Cited by 6 publications

(4 citation statements)

References 31 publications

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“…Figure shows the Raman spectra of the fabricated devices. For the Al/Ge/Sn/Ge/Sn on p -Si and n -Si substrates, there is a peak at 523 cm –1 that corresponds to the crystalline Si substrates. , A broad band at 350–520 cm –1 is detected for the prepared Al/Si/Sn/Ge/Sn on FTO, which corresponds to poly:Si formed by MIC of the deposited Si layer and the SiO 2 vibrational mode formed because of the oxidation of Si during annealing at low vacuum levels. − The appearance of poly:Ge and GeSn modes at 300 cm –1 are shifted toward lower wavenumbers due to the transformation of the amorphous germanium layer to a polycrystalline one via tin-induced crystallization and the incorporation of Sn metal inside the Ge network . The signature of the GeSn mode is weak due to the strong peaks of the c:Si, corresponding to the silicon substrates.…”

Section: Resultsmentioning

confidence: 99%

Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC)

Nawwar

Ghazala

El-Deen

et al. 2022

Crystal Growth & Design

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Solubility of Sn in Ge network gives it a preference for photonic applications, because of the direct transition in GeSn alloy. Here, we employed the metal-induced crystallization (MIC) process of amorphous Ge and Si via Sn as a novel mechanism to incorporate Sn inside Ge and Si networks. (Al/Si/Sn/Ge/Sn) and (Al/Ge/Sn/Ge/Sn) multilayers are deposited by thermal vacuum evaporation on different substrates. The devices are annealed under low vacuum at 500 °C to incorporate the oxygen for band-gap tuning. The structure of Ge-doped nanocrystals is investigated. The direct transition and band-gap values have been estimated using diffuse reflectance spectroscopy and photoluminescence (PL) measurements. PL indicated that the junctions have emissions from visible to NIR regions that make them promising as optically pumped white-light sources as well as waveguide applications, and the impact of the base substrate on enhancing the emission has been investigated via PL measurements. Electroluminescence measurements show that the prepared heterostructures on fluorine-doped tin oxide (FTO) substrate have sharp random lasing spikes over the range of PL samples spectra as the sample can lase randomly by light scattering through the Ge-doped nanocrystalline materials. The charge carrier lifetime measurements show high lifetime for the prepared sample. These give them the chance to be a candidate for white-light random laser diode applications.

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Section: Resultsmentioning

confidence: 99%

Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC)

Nawwar

Ghazala

El-Deen

et al. 2022

Crystal Growth & Design

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“…where h is the full depth. Nano-scratch testing was carried out with a procedure previously used in our laboratory (Lemoine et al, 2004) and similar to that employed in many other thin film studies (Banday et al, 2021;Zhi et al, 2022;Ma et al, 2021). Compared to the nanoindentation study, we used a more acute diamond cube corner tip (semi-included apex angle = 45 • ) to increase strain and trigger brittle fracture.…”

Section: Methodsmentioning

confidence: 99%

Nanoindentation and Nano-Scratching of Hydroxyapatite Coatings for Resorbable Magnesium Alloy Bone Implant Applications

LEMOINE¹,

Acheson²,

McKillop³

et al. 2022

SSRN Journal

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“…These effects will decrease the laser induced damage threshold (LIDT) of SiO2 thin film, therefore affect the performance of optical systems under high laser power irradiation. Many thin film modification methods have been proposed to improve the LIDT of SiO2 thin film, including thermal annealing [27], plasma treatment [28,29] and laser conditioning [30][31][32]. Among them, femtosecond laser conditioning mainly belongs to non-thermal transition [33], therefore is less likely to cause serious thermal damage to the interior of materials than nanosecond laser pulse.…”

Section: Introductionmentioning

confidence: 99%

“…Understanding the properties changes of SiO2 thin film after femtosecond laser conditioning is important to improve process of modification method. Zhi et al has investigated the mechanic properties changes of ALD SiO2 thin film after femtosecond laser modification [30]. In this article, we applied femtosecond laser to the modification of ALD SiO2 thin film on the fused silica substrates, in order to improve the laser induced damage resistance of ALD SiO2 thin film.…”

Section: Introductionmentioning

confidence: 99%

Properties of femtosecond laser modified atomic layer deposition SiO2 films and their resistance to nanosecond ultraviolet lasers

Yuan¹,

Geng²,

Zhang³

et al. 2022

Advanced Laser Processing and Manufacturing VI

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The point defects exist in the SiO2 thin films can cause high absorption, which is known to be responsible for laser induced damage of the films under high power nanosecond (ns) laser irradiation. Laser conditioning of the film is beneficial to eliminate the film defects and improve the ability of films to resist ultraviolet (UV) ns laser damage. In this article, femtosecond laser is proposed to modify the SiO2 films in the hope of improving the damage resistance of films to UV lasers. After femtosecond laser conditioning, the film properties of ALD SiO2 films were characterized in terms of surface morphology, UV laser damage induced threshold (LIDT) and optical properties. The results show that significant improvement in laser damage resistance is achieved after femtosecond laser conditioning, the LIDT of the 300 nm SiO2 thin film increased from 1.55 J/cm2 to 16.69 J/cm2, and the LIDT of the 600 nm SiO2 thin film increased from 2.01 J/cm2 to 9.46 J/cm2.

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Mechanic properties modification of SiO2 thin films by femtosecond laser

Cited by 6 publications

References 31 publications

Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC)

Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC)

Nanoindentation and Nano-Scratching of Hydroxyapatite Coatings for Resorbable Magnesium Alloy Bone Implant Applications

Properties of femtosecond laser modified atomic layer deposition SiO2 films and their resistance to nanosecond ultraviolet lasers

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